IRFI9520GPBF Todos los transistores

 ..1. Size:1009K  international rectifier
 irfi9520gpbf.pdf

PD- 95391 IRFI9520GPbF Lead-Free 06/10/04 Document Number 91162 www.vishay.com 1 IRFI9520GPbF Document Number 91162 www.vishay.com 2 IRFI9520GPbF Document Number 91162 www.vishay.com 3 IRFI9520GPbF Document Number 91162 www.vishay.com 4 IRFI9520GPbF Document Number 91162 www.vishay.com 5 IRFI9520GPbF Document Number 91162 www.vishay.com 6 IRFI9520GPbF Docum

 ..2. Size:1448K  vishay
 irfi9520g irfi9520gpbf sihfi9520g.pdf

IRFI9520G, SiHFI9520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = - 10 V 0.60 f = 60 Hz) RoHS* Qg (Max.) (nC) 18 Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qgs (nC) 3.0 P-Channel Qgd (nC) 9.0 175 C Operating Temperature Configuration

 5.1. Size:170K  international rectifier
 irfi9520g.pdf

 5.2. Size:1446K  vishay
 irfi9520g sihfi9520g.pdf

IRFI9520G, SiHFI9520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = - 10 V 0.60 f = 60 Hz) RoHS* Qg (Max.) (nC) 18 Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qgs (nC) 3.0 P-Channel Qgd (nC) 9.0 175 C Operating Temperature Configuration

 6.1. Size:103K  international rectifier
 irfi9520n.pdf

PD - 9.1527 IRFI9520N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = -100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.48 P-Channel G Fully Avalanche Rated ID = -5.5A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extr