IRFI9520GPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFI9520GPBF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 37 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 5.2 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 18 nC
Tiempo de subida (tr): 29 nS
Conductancia de drenaje-sustrato (Cd): 170 pF
Resistencia entre drenaje y fuente RDS(on): 0.6 Ohm
Paquete / Cubierta: TO220F
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IRFI9520GPBF Datasheet (PDF)
irfi9520gpbf.pdf
PD- 95391IRFI9520GPbF Lead-Free06/10/04Document Number: 91162 www.vishay.com1IRFI9520GPbFDocument Number: 91162 www.vishay.com2IRFI9520GPbFDocument Number: 91162 www.vishay.com3IRFI9520GPbFDocument Number: 91162 www.vishay.com4IRFI9520GPbFDocument Number: 91162 www.vishay.com5IRFI9520GPbFDocument Number: 91162 www.vishay.com6IRFI9520GPbFDocum
irfi9520g irfi9520gpbf sihfi9520g.pdf
IRFI9520G, SiHFI9520GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = - 10 V 0.60f = 60 Hz)RoHS*Qg (Max.) (nC) 18 Sink to Lead Creepage Distance = 4.8 mmCOMPLIANTQgs (nC) 3.0 P-ChannelQgd (nC) 9.0 175 C Operating TemperatureConfiguration
irfi9520g sihfi9520g.pdf
IRFI9520G, SiHFI9520GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = - 10 V 0.60f = 60 Hz)RoHS*Qg (Max.) (nC) 18 Sink to Lead Creepage Distance = 4.8 mmCOMPLIANTQgs (nC) 3.0 P-ChannelQgd (nC) 9.0 175 C Operating TemperatureConfiguration
irfi9520n.pdf
PD - 9.1527IRFI9520NPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = -100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.48 P-ChannelG Fully Avalanche RatedID = -5.5ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextr
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
