IRFI9530GPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFI9530GPBF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 42 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.7 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 52 nS
Cossⓘ - Capacitancia de salida: 340 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
Paquete / Cubierta: TO220F
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IRFI9530GPBF Datasheet (PDF)
irfi9530gpbf.pdf
PD - 94932IRFI9530GPbF Lead-Free1/8/04Document Number: 91163 www.vishay.com1IRFI9530GPbFDocument Number: 91163 www.vishay.com2IRFI9530GPbFDocument Number: 91163 www.vishay.com3IRFI9530GPbFDocument Number: 91163 www.vishay.com4IRFI9530GPbFDocument Number: 91163 www.vishay.com5IRFI9530GPbFDocument Number: 91163 www.vishay.com6IRFI9530GPbFTO-220
irfi9530gpbf sihfi9530g.pdf
IRFI9530G, SiHFI9530GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.30RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 38 COMPLIANT P-ChannelQgs (nC) 6.8 175 C Operating TemperatureQgd (nC) 21 Dynamic dV/
irfi9530g sihfi9530g.pdf
IRFI9530G, SiHFI9530GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.30RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 38 COMPLIANT P-ChannelQgs (nC) 6.8 175 C Operating TemperatureQgd (nC) 21 Dynamic dV/
irfi9530g.pdf
IRFI9530Gwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.220 at VGS = - 10 V - 12 TrenchFET Power MOSFET- 100 11.70.230 at VGS = - 4.5 V - 10 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Switch DC/DC Co
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918