All MOSFET. IRFI9530GPBF Datasheet

 

IRFI9530GPBF Datasheet and Replacement


   Type Designator: IRFI9530GPBF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 52 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO220F
 

 IRFI9530GPBF substitution

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IRFI9530GPBF Datasheet (PDF)

 ..1. Size:2151K  international rectifier
 irfi9530gpbf.pdf pdf_icon

IRFI9530GPBF

PD - 94932IRFI9530GPbF Lead-Free1/8/04Document Number: 91163 www.vishay.com1IRFI9530GPbFDocument Number: 91163 www.vishay.com2IRFI9530GPbFDocument Number: 91163 www.vishay.com3IRFI9530GPbFDocument Number: 91163 www.vishay.com4IRFI9530GPbFDocument Number: 91163 www.vishay.com5IRFI9530GPbFDocument Number: 91163 www.vishay.com6IRFI9530GPbFTO-220

 ..2. Size:1460K  vishay
 irfi9530gpbf sihfi9530g.pdf pdf_icon

IRFI9530GPBF

IRFI9530G, SiHFI9530GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.30RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 38 COMPLIANT P-ChannelQgs (nC) 6.8 175 C Operating TemperatureQgd (nC) 21 Dynamic dV/

 5.1. Size:174K  international rectifier
 irfi9530g.pdf pdf_icon

IRFI9530GPBF

 5.2. Size:1458K  vishay
 irfi9530g sihfi9530g.pdf pdf_icon

IRFI9530GPBF

IRFI9530G, SiHFI9530GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.30RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 38 COMPLIANT P-ChannelQgs (nC) 6.8 175 C Operating TemperatureQgd (nC) 21 Dynamic dV/

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History: VBZL150N03

Keywords - IRFI9530GPBF MOSFET datasheet

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