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IRFI9540G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFI9540G
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 110 nS
   Cossⓘ - Capacitancia de salida: 590 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: TO220F
 

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IRFI9540G Datasheet (PDF)

 ..1. Size:284K  international rectifier
 irfi9540g.pdf pdf_icon

IRFI9540G

PD - 95609IRFI9540GPbF Lead-Free7/29/03Document Number: 91164 www.vishay.com1IRFI9540GPbFDocument Number: 91164 www.vishay.com2IRFI9540GPbFDocument Number: 91164 www.vishay.com3IRFI9540GPbFDocument Number: 91164 www.vishay.com4IRFI9540GPbFDocument Number: 91164 www.vishay.com5IRFI9540GPbFDocument Number: 91164 www.vishay.com6IRFI9540GPbFPeak

 ..2. Size:943K  vishay
 irfi9540g sihfi9540g.pdf pdf_icon

IRFI9540G

IRFI9540G, SiHFI9540GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.20RoHS* Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 61 COMPLIANT P-ChannelQgs (nC) 14 175 C Operating TemperatureQgd (nC) 29 Dynamic dV/dt

 0.1. Size:944K  vishay
 irfi9540g-pbf sihfi9540g.pdf pdf_icon

IRFI9540G

IRFI9540G, SiHFI9540GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.20RoHS* Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 61 COMPLIANT P-ChannelQgs (nC) 14 175 C Operating TemperatureQgd (nC) 29 Dynamic dV/dt

 0.2. Size:2870K  cn vbsemi
 irfi9540gp.pdf pdf_icon

IRFI9540G

IRFI9540GPwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.220 at VGS = - 10 V - 12 TrenchFET Power MOSFET- 100 11.70.230 at VGS = - 4.5 V - 10 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Switch DC/DC C

MOSTRAR MÁS

Otros transistores... IRFI7536GPBF , IRFI820GPBF , IRFI830GPBF , IRFI840GLCPBF , IRFI840GPBF , IRFI9520G , IRFI9520GPBF , IRFI9530GPBF , IRLB4132 , IRFI9540GPBF , IRFI9610G , IRFI9610GPBF , IRFI9620GPBF , IRFI9630GPBF , IRFI9634GPBF , IRFI9640GPBF , IRFI9Z14G .

History: SST202 | AO4932 | NCE85H21TC | STD5NK50Z | AM45N06-16D | UT8205AL-S08-R

 

 
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