IRFI9540G - описание и поиск аналогов

PD - 95609 IRFI9540GPbF Lead-Free 7/29/03 Document Number 91164 www.vishay.com 1 IRFI9540GPbF Document Number 91164 www.vishay.com 2 IRFI9540GPbF Document Number 91164 www.vishay.com 3 IRFI9540GPbF Document Number 91164 www.vishay.com 4 IRFI9540GPbF Document Number 91164 www.vishay.com 5 IRFI9540GPbF Document Number 91164 www.vishay.com 6 IRFI9540GPbF Peak

IRFI9540G, SiHFI9540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.20 RoHS* Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 61 COMPLIANT P-Channel Qgs (nC) 14 175 C Operating Temperature Qgd (nC) 29 Dynamic dV/dt

IRFI9540G, SiHFI9540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.20 RoHS* Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 61 COMPLIANT P-Channel Qgs (nC) 14 175 C Operating Temperature Qgd (nC) 29 Dynamic dV/dt

IRFI9540GP www.VBsemi.tw P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.220 at VGS = - 10 V - 12 TrenchFET Power MOSFET - 100 11.7 0.230 at VGS = - 4.5 V - 10 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Switch DC/DC C

PD - 9.1487B IRFI9540N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = -100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.117 P-Channel G Fully Avalanche Rated ID = -15A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve ext