IRFI9640GPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFI9640GPBF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 40 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 6.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 43 nS
Cossⓘ - Capacitancia de salida: 370 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de IRFI9640GPBF MOSFET
- Selecciónⓘ de transistores por parámetros
IRFI9640GPBF datasheet
..1. Size:1100K international rectifier
irfi9640gpbf.pdf 
PD- 95351 IRFI9640GPbF Lead-Free 06/04/01 Document Number 91169 www.vishay.com 1 IRFI9640GPbF Document Number 91169 www.vishay.com 2 IRFI9640GPbF Document Number 91169 www.vishay.com 3 IRFI9640GPbF Document Number 91169 www.vishay.com 4 IRFI9640GPbF Document Number 91169 www.vishay.com 5 IRFI9640GPbF Document Number 91169 www.vishay.com 6 IRFI9640GPbF Docum
..2. Size:1655K vishay
irfi9640gpbf sihfi9640g.pdf
IRFI9640G, SiHFI9640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.50 RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 44 COMPLIANT P-Channel Qgs (nC) 7.1 Dynamic dV/dt Rating Qgd (nC) 27 Low Thermal Resist
5.2. Size:1653K vishay
irfi9640g sihfi9640g.pdf
IRFI9640G, SiHFI9640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.50 RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 44 COMPLIANT P-Channel Qgs (nC) 7.1 Dynamic dV/dt Rating Qgd (nC) 27 Low Thermal Resist
8.1. Size:363K international rectifier
irfi9634g.pdf
PD - 95610 IRFI9634GPbF Lead-Free 7/29/04 Document Number 91168 www.vishay.com 1 IRFI9634GPbF Document Number 91168 www.vishay.com 2 IRFI9634GPbF Document Number 91168 www.vishay.com 3 IRFI9634GPbF Document Number 91168 www.vishay.com 4 IRFI9634GPbF Document Number 91168 www.vishay.com 5 IRFI9634GPbF Document Number 91168 www.vishay.com 6 IRFI9634GPbF Docum
8.2. Size:1324K international rectifier
irfi9620gpbf.pdf
PD- 95744 IRFI9620GPbF Lead-Free 8/23/04 Document Number 91166 www.vishay.com 1 IRFI9620GPbF Document Number 91166 www.vishay.com 2 IRFI9620GPbF Document Number 91166 www.vishay.com 3 IRFI9620GPbF Document Number 91166 www.vishay.com 4 IRFI9620GPbF Document Number 91166 www.vishay.com 5 IRFI9620GPbF Document Number 91166 www.vishay.com 6 IRFI9620GPbF Peak D
8.4. Size:232K international rectifier
irfi9610gpbf.pdf
PD - 95504 IRFI9610GPbF HEXFET Power MOSFET l Isolated Package D l High Voltage Isolation=2.5KVRMS VDSS = -200V l Sink to Lead Creepage Dist.=4.8mm l P-Channel RDS(on) = 3.0 l Dynamic dv/dt Rating G l Low thermal Resistance ID = -2.0A l Lead-Free S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast
8.5. Size:924K international rectifier
irfi9630g.pdf
PD - 94851 IRFI9630GPbF Lead-Free 11/07/03 Document Number 91167 www.vishay.com 1 IRFI9630GPbF Document Number 91167 www.vishay.com 2 IRFI9630GPbF Document Number 91167 www.vishay.com 3 IRFI9630GPbF Document Number 91167 www.vishay.com 4 IRFI9630GPbF Document Number 91167 www.vishay.com 5 IRFI9630GPbF Document Number 91167 www.vishay.com 6 IRFI9630GPbF TO-2
8.6. Size:170K international rectifier
irfi9610g.pdf
PD - 94577 IRFI9610G HEXFET Power MOSFET l Isolated Package D l High Voltage Isolation=2.5KVRMS VDSS = -200V l Sink to Lead Creepage Dist.=4.8mm l P-Channel RDS(on) = 3.0 l Dynamic dv/dt Rating G l Low thermal Resistance ID = -2.0A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, rugge
8.7. Size:814K vishay
irfi9610g sihfi9610g.pdf
IRFI9610G, SiHFI9610G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = - 10 V 3.0 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 13 P-Channel Qgs (nC) 3.2 Dynamic dV/dt Rating Qgd (nC) 7.3 Low Thermal Resista
8.8. Size:832K vishay
irfi9634gpbf sihfi9634g.pdf
IRFI9634G, SiHFI9634G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) - 250 Dynamic dV/dt Rating RDS(on) ( )VGS = - 10 V 1.0 150 C Operating Temperature Qg (Max.) (nC) 38 Fast Switching Qgs (nC) 8.0 P-Channel Qgd (nC) 18 Fully Avalanche Rated Configuration Single Lead (Pb)-free Available S DESCRIPTION
8.9. Size:831K vishay
irfi9634g sihfi9634g.pdf
IRFI9634G, SiHFI9634G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) - 250 Dynamic dV/dt Rating RDS(on) ( )VGS = - 10 V 1.0 150 C Operating Temperature Qg (Max.) (nC) 38 Fast Switching Qgs (nC) 8.0 P-Channel Qgd (nC) 18 Fully Avalanche Rated Configuration Single Lead (Pb)-free Available S DESCRIPTION
8.10. Size:1550K vishay
irfi9630gpbf sihfi9630g.pdf
IRFI9630G, SiHFI9630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s, Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.80 RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 29 COMPLIANT P-Channel Qgs (nC) 5.4 Dynamic dV/dt Rating Qgd (nC) 15 Low Thermal Resist
8.11. Size:1647K vishay
irfi9620gpbf sihfi9620g.pdf
IRFI9620G, SiHFI9620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 200 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = - 10 V 1.5 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 15 P-Channel Qgs (nC) 3.2 Dynamic dV/dt Qgd (nC) 8.4 Low Thermal Resistance Conf
8.12. Size:1671K vishay
irfi9620g sihfi9620g.pdf
IRFI9620G, SiHFI9620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 200 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = - 10 V 1.5 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 15 P-Channel Qgs (nC) 3.2 Dynamic dV/dt Qgd (nC) 8.4 Low Thermal Resistance Conf
8.13. Size:1549K vishay
irfi9630g sihfi9630g.pdf
IRFI9630G, SiHFI9630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s, Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.80 RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 29 COMPLIANT P-Channel Qgs (nC) 5.4 Dynamic dV/dt Rating Qgd (nC) 15 Low Thermal Resist
8.14. Size:790K vishay
irfi9610g-pbf sihfi9610g.pdf
IRFI9610G, SiHFI9610G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = - 10 V 3.0 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 13 P-Channel Qgs (nC) 3.2 Dynamic dV/dt Rating Qgd (nC) 7.3 Low Thermal Resista
Otros transistores... IRFI9530GPBF
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