IRFI9640GPBF - описание и поиск аналогов

PD- 95351 IRFI9640GPbF Lead-Free 06/04/01 Document Number 91169 www.vishay.com 1 IRFI9640GPbF Document Number 91169 www.vishay.com 2 IRFI9640GPbF Document Number 91169 www.vishay.com 3 IRFI9640GPbF Document Number 91169 www.vishay.com 4 IRFI9640GPbF Document Number 91169 www.vishay.com 5 IRFI9640GPbF Document Number 91169 www.vishay.com 6 IRFI9640GPbF Docum

IRFI9640G, SiHFI9640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.50 RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 44 COMPLIANT P-Channel Qgs (nC) 7.1 Dynamic dV/dt Rating Qgd (nC) 27 Low Thermal Resist

IRFI9640G, SiHFI9640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.50 RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 44 COMPLIANT P-Channel Qgs (nC) 7.1 Dynamic dV/dt Rating Qgd (nC) 27 Low Thermal Resist

PD - 95610 IRFI9634GPbF Lead-Free 7/29/04 Document Number 91168 www.vishay.com 1 IRFI9634GPbF Document Number 91168 www.vishay.com 2 IRFI9634GPbF Document Number 91168 www.vishay.com 3 IRFI9634GPbF Document Number 91168 www.vishay.com 4 IRFI9634GPbF Document Number 91168 www.vishay.com 5 IRFI9634GPbF Document Number 91168 www.vishay.com 6 IRFI9634GPbF Docum

PD- 95744 IRFI9620GPbF Lead-Free 8/23/04 Document Number 91166 www.vishay.com 1 IRFI9620GPbF Document Number 91166 www.vishay.com 2 IRFI9620GPbF Document Number 91166 www.vishay.com 3 IRFI9620GPbF Document Number 91166 www.vishay.com 4 IRFI9620GPbF Document Number 91166 www.vishay.com 5 IRFI9620GPbF Document Number 91166 www.vishay.com 6 IRFI9620GPbF Peak D

PD - 95504 IRFI9610GPbF HEXFET Power MOSFET l Isolated Package D l High Voltage Isolation=2.5KVRMS VDSS = -200V l Sink to Lead Creepage Dist.=4.8mm l P-Channel RDS(on) = 3.0 l Dynamic dv/dt Rating G l Low thermal Resistance ID = -2.0A l Lead-Free S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast

PD - 94851 IRFI9630GPbF Lead-Free 11/07/03 Document Number 91167 www.vishay.com 1 IRFI9630GPbF Document Number 91167 www.vishay.com 2 IRFI9630GPbF Document Number 91167 www.vishay.com 3 IRFI9630GPbF Document Number 91167 www.vishay.com 4 IRFI9630GPbF Document Number 91167 www.vishay.com 5 IRFI9630GPbF Document Number 91167 www.vishay.com 6 IRFI9630GPbF TO-2

PD - 94577 IRFI9610G HEXFET Power MOSFET l Isolated Package D l High Voltage Isolation=2.5KVRMS VDSS = -200V l Sink to Lead Creepage Dist.=4.8mm l P-Channel RDS(on) = 3.0 l Dynamic dv/dt Rating G l Low thermal Resistance ID = -2.0A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, rugge

IRFI9610G, SiHFI9610G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = - 10 V 3.0 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 13 P-Channel Qgs (nC) 3.2 Dynamic dV/dt Rating Qgd (nC) 7.3 Low Thermal Resista

IRFI9634G, SiHFI9634G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) - 250 Dynamic dV/dt Rating RDS(on) ( )VGS = - 10 V 1.0 150 C Operating Temperature Qg (Max.) (nC) 38 Fast Switching Qgs (nC) 8.0 P-Channel Qgd (nC) 18 Fully Avalanche Rated Configuration Single Lead (Pb)-free Available S DESCRIPTION

IRFI9634G, SiHFI9634G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) - 250 Dynamic dV/dt Rating RDS(on) ( )VGS = - 10 V 1.0 150 C Operating Temperature Qg (Max.) (nC) 38 Fast Switching Qgs (nC) 8.0 P-Channel Qgd (nC) 18 Fully Avalanche Rated Configuration Single Lead (Pb)-free Available S DESCRIPTION

IRFI9630G, SiHFI9630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s, Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.80 RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 29 COMPLIANT P-Channel Qgs (nC) 5.4 Dynamic dV/dt Rating Qgd (nC) 15 Low Thermal Resist

IRFI9620G, SiHFI9620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 200 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = - 10 V 1.5 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 15 P-Channel Qgs (nC) 3.2 Dynamic dV/dt Qgd (nC) 8.4 Low Thermal Resistance Conf

IRFI9620G, SiHFI9620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 200 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = - 10 V 1.5 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 15 P-Channel Qgs (nC) 3.2 Dynamic dV/dt Qgd (nC) 8.4 Low Thermal Resistance Conf

IRFI9630G, SiHFI9630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s, Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.80 RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 29 COMPLIANT P-Channel Qgs (nC) 5.4 Dynamic dV/dt Rating Qgd (nC) 15 Low Thermal Resist

IRFI9610G, SiHFI9610G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = - 10 V 3.0 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 13 P-Channel Qgs (nC) 3.2 Dynamic dV/dt Rating Qgd (nC) 7.3 Low Thermal Resista