IRFI9Z24G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFI9Z24G
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 37 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 8.5 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 68 nS
Cossⓘ - Capacitancia de salida: 360 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
Paquete / Cubierta: TO220F
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IRFI9Z24G Datasheet (PDF)
irfi9z24gpbf.pdf
PD- 95976IRFI9Z24GPbF Lead-Free12/20/04Document Number: 91171 www.vishay.com1IRFI9Z24GPbFDocument Number: 91171 www.vishay.com2IRFI9Z24GPbFDocument Number: 91171 www.vishay.com3IRFI9Z24GPbFDocument Number: 91171 www.vishay.com4IRFI9Z24GPbFDocument Number: 91171 www.vishay.com5IRFI9Z24GPbFDocument Number: 91171 www.vishay.com6IRFI9Z24GPbFPeak
irfi9z24g sihfi9z24g.pdf
IRFI9Z24G, SiHFI9Z24GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.28RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANTQg (Max.) (nC) 19 P-ChannelQgs (nC) 5.4 175 C Operating TemperatureQgd (nC) 11 Dynamic dV/dt
irfi9z24g-pbf sihfi9z24g.pdf
IRFI9Z24G, SiHFI9Z24GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.28RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANTQg (Max.) (nC) 19 P-ChannelQgs (nC) 5.4 175 C Operating TemperatureQgd (nC) 11 Dynamic dV/dt
irfi9z24n.pdf
PD - 9.1529AIRFI9Z24NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = -55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.175 P-ChannelG Fully Avalanche RatedID = -9.5ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on
irfi9z14gpbf.pdf
PD- 95975IRFI9Z14GPbF Lead-Free12/20/04Document Number: 91170 www.vishay.com1IRFI9Z14GPbFDocument Number: 91170 www.vishay.com2IRFI9Z14GPbFDocument Number: 91170 www.vishay.com3IRFI9Z14GPbFDocument Number: 91170 www.vishay.com4IRFI9Z14GPbFDocument Number: 91170 www.vishay.com5IRFI9Z14GPbFDocument Number: 91170 www.vishay.com6IRFI9Z14GPbFPeak
irfi9z34g.pdf
PD - 94866IRFI9Z34GPbF Lead-Free12/04/03Document Number: 91172 www.vishay.com1IRFI9Z34GPbFDocument Number: 91172 www.vishay.com2IRFI9Z34GPbFDocument Number: 91172 www.vishay.com3IRFI9Z34GPbFDocument Number: 91172 www.vishay.com4IRFI9Z34GPbFDocument Number: 91172 www.vishay.com5IRFI9Z34GPbFDocument Number: 91172 www.vishay.com6IRFI9Z34GPbFTO-2
irfi9z34n.pdf
PD - 9.1530AIRFI9Z34NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = -55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.10 P-ChannelG Fully Avalanche RatedID = -14ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-r
irfi9z14g sihfi9z14g.pdf
IRFI9Z14G, SiHFI9Z14GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)RDS(on) ()VGS = - 10 V 0.50RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 12 P-ChannelQgs (nC) 3.8 175 C Operating TemperatureQgd (nC) 5.1 Dynamic dV
irfi9z14g-pbf sihfi9z14g.pdf
IRFI9Z14G, SiHFI9Z14GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)RDS(on) ()VGS = - 10 V 0.50RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 12 P-ChannelQgs (nC) 3.8 175 C Operating TemperatureQgd (nC) 5.1 Dynamic dV
irfi9z34g-pbf sihfi9z34g.pdf
IRFI9Z34G, SiHFI9Z34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.14RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 34 COMPLIANT P-ChannelQgs (nC) 9.9 175 C Operating TemperatureQgd (nC) 16 Dynamic dV/
irfi9z34g sihfi9z34g.pdf
IRFI9Z34G, SiHFI9Z34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.14RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 34 COMPLIANT P-ChannelQgs (nC) 9.9 175 C Operating TemperatureQgd (nC) 16 Dynamic dV/
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
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