IRFI9Z24G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFI9Z24G
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 37 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 8.5 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 68 nS
Cossⓘ - Capacitancia de salida: 360 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de IRFI9Z24G MOSFET
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IRFI9Z24G datasheet
..1. Size:1774K international rectifier
irfi9z24gpbf.pdf 
PD- 95976 IRFI9Z24GPbF Lead-Free 12/20/04 Document Number 91171 www.vishay.com 1 IRFI9Z24GPbF Document Number 91171 www.vishay.com 2 IRFI9Z24GPbF Document Number 91171 www.vishay.com 3 IRFI9Z24GPbF Document Number 91171 www.vishay.com 4 IRFI9Z24GPbF Document Number 91171 www.vishay.com 5 IRFI9Z24GPbF Document Number 91171 www.vishay.com 6 IRFI9Z24GPbF Peak
..3. Size:1483K vishay
irfi9z24g sihfi9z24g.pdf
IRFI9Z24G, SiHFI9Z24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.28 RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 19 P-Channel Qgs (nC) 5.4 175 C Operating Temperature Qgd (nC) 11 Dynamic dV/dt
0.1. Size:1485K vishay
irfi9z24g-pbf sihfi9z24g.pdf
IRFI9Z24G, SiHFI9Z24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.28 RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 19 P-Channel Qgs (nC) 5.4 175 C Operating Temperature Qgd (nC) 11 Dynamic dV/dt
6.1. Size:119K international rectifier
irfi9z24n.pdf
PD - 9.1529A IRFI9Z24N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = -55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.175 P-Channel G Fully Avalanche Rated ID = -9.5A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on
8.2. Size:1829K international rectifier
irfi9z14gpbf.pdf
PD- 95975 IRFI9Z14GPbF Lead-Free 12/20/04 Document Number 91170 www.vishay.com 1 IRFI9Z14GPbF Document Number 91170 www.vishay.com 2 IRFI9Z14GPbF Document Number 91170 www.vishay.com 3 IRFI9Z14GPbF Document Number 91170 www.vishay.com 4 IRFI9Z14GPbF Document Number 91170 www.vishay.com 5 IRFI9Z14GPbF Document Number 91170 www.vishay.com 6 IRFI9Z14GPbF Peak
8.3. Size:911K international rectifier
irfi9z34g.pdf
PD - 94866 IRFI9Z34GPbF Lead-Free 12/04/03 Document Number 91172 www.vishay.com 1 IRFI9Z34GPbF Document Number 91172 www.vishay.com 2 IRFI9Z34GPbF Document Number 91172 www.vishay.com 3 IRFI9Z34GPbF Document Number 91172 www.vishay.com 4 IRFI9Z34GPbF Document Number 91172 www.vishay.com 5 IRFI9Z34GPbF Document Number 91172 www.vishay.com 6 IRFI9Z34GPbF TO-2
8.4. Size:120K international rectifier
irfi9z34n.pdf
PD - 9.1530A IRFI9Z34N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = -55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.10 P-Channel G Fully Avalanche Rated ID = -14A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-r
8.5. Size:1578K vishay
irfi9z14g sihfi9z14g.pdf
IRFI9Z14G, SiHFI9Z14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.50 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 12 P-Channel Qgs (nC) 3.8 175 C Operating Temperature Qgd (nC) 5.1 Dynamic dV
8.6. Size:1580K vishay
irfi9z14g-pbf sihfi9z14g.pdf
IRFI9Z14G, SiHFI9Z14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.50 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 12 P-Channel Qgs (nC) 3.8 175 C Operating Temperature Qgd (nC) 5.1 Dynamic dV
8.7. Size:1417K vishay
irfi9z34g-pbf sihfi9z34g.pdf
IRFI9Z34G, SiHFI9Z34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.14 RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 34 COMPLIANT P-Channel Qgs (nC) 9.9 175 C Operating Temperature Qgd (nC) 16 Dynamic dV/
8.8. Size:1415K vishay
irfi9z34g sihfi9z34g.pdf
IRFI9Z34G, SiHFI9Z34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.14 RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 34 COMPLIANT P-Channel Qgs (nC) 9.9 175 C Operating Temperature Qgd (nC) 16 Dynamic dV/
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