All MOSFET. IRFI9Z24G Datasheet

 

IRFI9Z24G MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFI9Z24G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8.5 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO220F

 IRFI9Z24G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFI9Z24G Datasheet (PDF)

 ..1. Size:1774K  international rectifier
 irfi9z24gpbf.pdf

IRFI9Z24G IRFI9Z24G

PD- 95976IRFI9Z24GPbF Lead-Free12/20/04Document Number: 91171 www.vishay.com1IRFI9Z24GPbFDocument Number: 91171 www.vishay.com2IRFI9Z24GPbFDocument Number: 91171 www.vishay.com3IRFI9Z24GPbFDocument Number: 91171 www.vishay.com4IRFI9Z24GPbFDocument Number: 91171 www.vishay.com5IRFI9Z24GPbFDocument Number: 91171 www.vishay.com6IRFI9Z24GPbFPeak

 ..2. Size:169K  international rectifier
 irfi9z24g.pdf

IRFI9Z24G IRFI9Z24G

 ..3. Size:1483K  vishay
 irfi9z24g sihfi9z24g.pdf

IRFI9Z24G IRFI9Z24G

IRFI9Z24G, SiHFI9Z24GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.28RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANTQg (Max.) (nC) 19 P-ChannelQgs (nC) 5.4 175 C Operating TemperatureQgd (nC) 11 Dynamic dV/dt

 0.1. Size:1485K  vishay
 irfi9z24g-pbf sihfi9z24g.pdf

IRFI9Z24G IRFI9Z24G

IRFI9Z24G, SiHFI9Z24GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.28RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANTQg (Max.) (nC) 19 P-ChannelQgs (nC) 5.4 175 C Operating TemperatureQgd (nC) 11 Dynamic dV/dt

 6.1. Size:119K  international rectifier
 irfi9z24n.pdf

IRFI9Z24G IRFI9Z24G

PD - 9.1529AIRFI9Z24NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = -55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.175 P-ChannelG Fully Avalanche RatedID = -9.5ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on

 8.1. Size:175K  international rectifier
 irfi9z14g.pdf

IRFI9Z24G IRFI9Z24G

 8.2. Size:1829K  international rectifier
 irfi9z14gpbf.pdf

IRFI9Z24G IRFI9Z24G

PD- 95975IRFI9Z14GPbF Lead-Free12/20/04Document Number: 91170 www.vishay.com1IRFI9Z14GPbFDocument Number: 91170 www.vishay.com2IRFI9Z14GPbFDocument Number: 91170 www.vishay.com3IRFI9Z14GPbFDocument Number: 91170 www.vishay.com4IRFI9Z14GPbFDocument Number: 91170 www.vishay.com5IRFI9Z14GPbFDocument Number: 91170 www.vishay.com6IRFI9Z14GPbFPeak

 8.3. Size:911K  international rectifier
 irfi9z34g.pdf

IRFI9Z24G IRFI9Z24G

PD - 94866IRFI9Z34GPbF Lead-Free12/04/03Document Number: 91172 www.vishay.com1IRFI9Z34GPbFDocument Number: 91172 www.vishay.com2IRFI9Z34GPbFDocument Number: 91172 www.vishay.com3IRFI9Z34GPbFDocument Number: 91172 www.vishay.com4IRFI9Z34GPbFDocument Number: 91172 www.vishay.com5IRFI9Z34GPbFDocument Number: 91172 www.vishay.com6IRFI9Z34GPbFTO-2

 8.4. Size:120K  international rectifier
 irfi9z34n.pdf

IRFI9Z24G IRFI9Z24G

PD - 9.1530AIRFI9Z34NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = -55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.10 P-ChannelG Fully Avalanche RatedID = -14ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-r

 8.5. Size:1578K  vishay
 irfi9z14g sihfi9z14g.pdf

IRFI9Z24G IRFI9Z24G

IRFI9Z14G, SiHFI9Z14GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)RDS(on) ()VGS = - 10 V 0.50RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 12 P-ChannelQgs (nC) 3.8 175 C Operating TemperatureQgd (nC) 5.1 Dynamic dV

 8.6. Size:1580K  vishay
 irfi9z14g-pbf sihfi9z14g.pdf

IRFI9Z24G IRFI9Z24G

IRFI9Z14G, SiHFI9Z14GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)RDS(on) ()VGS = - 10 V 0.50RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 12 P-ChannelQgs (nC) 3.8 175 C Operating TemperatureQgd (nC) 5.1 Dynamic dV

 8.7. Size:1417K  vishay
 irfi9z34g-pbf sihfi9z34g.pdf

IRFI9Z24G IRFI9Z24G

IRFI9Z34G, SiHFI9Z34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.14RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 34 COMPLIANT P-ChannelQgs (nC) 9.9 175 C Operating TemperatureQgd (nC) 16 Dynamic dV/

 8.8. Size:1415K  vishay
 irfi9z34g sihfi9z34g.pdf

IRFI9Z24G IRFI9Z24G

IRFI9Z34G, SiHFI9Z34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.14RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 34 COMPLIANT P-ChannelQgs (nC) 9.9 175 C Operating TemperatureQgd (nC) 16 Dynamic dV/

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FCD900N60Z | MXP6010CTS

 

 
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