IRFI9Z24G Specs and Replacement
Type Designator: IRFI9Z24G
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 37
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 8.5
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
Electrical Characteristics
tr ⓘ - Rise Time: 68
nS
Cossⓘ -
Output Capacitance: 360
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28
Ohm
Package:
TO220F
-
MOSFET ⓘ Cross-Reference Search
IRFI9Z24G datasheet
..1. Size:1774K international rectifier
irfi9z24gpbf.pdf 
PD- 95976 IRFI9Z24GPbF Lead-Free 12/20/04 Document Number 91171 www.vishay.com 1 IRFI9Z24GPbF Document Number 91171 www.vishay.com 2 IRFI9Z24GPbF Document Number 91171 www.vishay.com 3 IRFI9Z24GPbF Document Number 91171 www.vishay.com 4 IRFI9Z24GPbF Document Number 91171 www.vishay.com 5 IRFI9Z24GPbF Document Number 91171 www.vishay.com 6 IRFI9Z24GPbF Peak ... See More ⇒
..3. Size:1483K vishay
irfi9z24g sihfi9z24g.pdf
IRFI9Z24G, SiHFI9Z24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.28 RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 19 P-Channel Qgs (nC) 5.4 175 C Operating Temperature Qgd (nC) 11 Dynamic dV/dt... See More ⇒
0.1. Size:1485K vishay
irfi9z24g-pbf sihfi9z24g.pdf
IRFI9Z24G, SiHFI9Z24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.28 RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 19 P-Channel Qgs (nC) 5.4 175 C Operating Temperature Qgd (nC) 11 Dynamic dV/dt... See More ⇒
6.1. Size:119K international rectifier
irfi9z24n.pdf
PD - 9.1529A IRFI9Z24N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = -55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.175 P-Channel G Fully Avalanche Rated ID = -9.5A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on... See More ⇒
8.2. Size:1829K international rectifier
irfi9z14gpbf.pdf
PD- 95975 IRFI9Z14GPbF Lead-Free 12/20/04 Document Number 91170 www.vishay.com 1 IRFI9Z14GPbF Document Number 91170 www.vishay.com 2 IRFI9Z14GPbF Document Number 91170 www.vishay.com 3 IRFI9Z14GPbF Document Number 91170 www.vishay.com 4 IRFI9Z14GPbF Document Number 91170 www.vishay.com 5 IRFI9Z14GPbF Document Number 91170 www.vishay.com 6 IRFI9Z14GPbF Peak ... See More ⇒
8.3. Size:911K international rectifier
irfi9z34g.pdf
PD - 94866 IRFI9Z34GPbF Lead-Free 12/04/03 Document Number 91172 www.vishay.com 1 IRFI9Z34GPbF Document Number 91172 www.vishay.com 2 IRFI9Z34GPbF Document Number 91172 www.vishay.com 3 IRFI9Z34GPbF Document Number 91172 www.vishay.com 4 IRFI9Z34GPbF Document Number 91172 www.vishay.com 5 IRFI9Z34GPbF Document Number 91172 www.vishay.com 6 IRFI9Z34GPbF TO-2... See More ⇒
8.4. Size:120K international rectifier
irfi9z34n.pdf
PD - 9.1530A IRFI9Z34N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = -55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.10 P-Channel G Fully Avalanche Rated ID = -14A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-r... See More ⇒
8.5. Size:1578K vishay
irfi9z14g sihfi9z14g.pdf
IRFI9Z14G, SiHFI9Z14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.50 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 12 P-Channel Qgs (nC) 3.8 175 C Operating Temperature Qgd (nC) 5.1 Dynamic dV... See More ⇒
8.6. Size:1580K vishay
irfi9z14g-pbf sihfi9z14g.pdf
IRFI9Z14G, SiHFI9Z14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.50 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 12 P-Channel Qgs (nC) 3.8 175 C Operating Temperature Qgd (nC) 5.1 Dynamic dV... See More ⇒
8.7. Size:1417K vishay
irfi9z34g-pbf sihfi9z34g.pdf
IRFI9Z34G, SiHFI9Z34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.14 RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 34 COMPLIANT P-Channel Qgs (nC) 9.9 175 C Operating Temperature Qgd (nC) 16 Dynamic dV/... See More ⇒
8.8. Size:1415K vishay
irfi9z34g sihfi9z34g.pdf
IRFI9Z34G, SiHFI9Z34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.14 RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 34 COMPLIANT P-Channel Qgs (nC) 9.9 175 C Operating Temperature Qgd (nC) 16 Dynamic dV/... See More ⇒
Detailed specifications: IRFI9610G
, IRFI9610GPBF
, IRFI9620GPBF
, IRFI9630GPBF
, IRFI9634GPBF
, IRFI9640GPBF
, IRFI9Z14G
, IRFI9Z14GPBF
, IRF1407
, IRFI9Z24GPBF
, IRFI9Z34G
, IRFI9Z34GPBF
, IRFIB41N15DPBF
, IRFIB5N50LPBF
, IRFIB5N65APBF
, IRFIB6N60APBF
, IRFIB7N50APBF
.
Keywords - IRFI9Z24G MOSFET specs
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