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IRFI9Z34G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFI9Z34G
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 120 nS
   Cossⓘ - Capacitancia de salida: 620 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
   Paquete / Cubierta: TO220F
     - Selección de transistores por parámetros

 

IRFI9Z34G Datasheet (PDF)

 ..1. Size:911K  international rectifier
 irfi9z34g.pdf pdf_icon

IRFI9Z34G

PD - 94866IRFI9Z34GPbF Lead-Free12/04/03Document Number: 91172 www.vishay.com1IRFI9Z34GPbFDocument Number: 91172 www.vishay.com2IRFI9Z34GPbFDocument Number: 91172 www.vishay.com3IRFI9Z34GPbFDocument Number: 91172 www.vishay.com4IRFI9Z34GPbFDocument Number: 91172 www.vishay.com5IRFI9Z34GPbFDocument Number: 91172 www.vishay.com6IRFI9Z34GPbFTO-2

 ..2. Size:1415K  vishay
 irfi9z34g sihfi9z34g.pdf pdf_icon

IRFI9Z34G

IRFI9Z34G, SiHFI9Z34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.14RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 34 COMPLIANT P-ChannelQgs (nC) 9.9 175 C Operating TemperatureQgd (nC) 16 Dynamic dV/

 0.1. Size:1417K  vishay
 irfi9z34g-pbf sihfi9z34g.pdf pdf_icon

IRFI9Z34G

IRFI9Z34G, SiHFI9Z34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.14RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 34 COMPLIANT P-ChannelQgs (nC) 9.9 175 C Operating TemperatureQgd (nC) 16 Dynamic dV/

 6.1. Size:120K  international rectifier
 irfi9z34n.pdf pdf_icon

IRFI9Z34G

PD - 9.1530AIRFI9Z34NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = -55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.10 P-ChannelG Fully Avalanche RatedID = -14ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-r

MOSTRAR MÁS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 10N65KG-TF3-T | 11P50A

 

 
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