All MOSFET. IRFI9Z34G Datasheet

 

IRFI9Z34G Datasheet and Replacement


   Type Designator: IRFI9Z34G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 620 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: TO220F
 

 IRFI9Z34G substitution

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IRFI9Z34G Datasheet (PDF)

 ..1. Size:911K  international rectifier
 irfi9z34g.pdf pdf_icon

IRFI9Z34G

PD - 94866IRFI9Z34GPbF Lead-Free12/04/03Document Number: 91172 www.vishay.com1IRFI9Z34GPbFDocument Number: 91172 www.vishay.com2IRFI9Z34GPbFDocument Number: 91172 www.vishay.com3IRFI9Z34GPbFDocument Number: 91172 www.vishay.com4IRFI9Z34GPbFDocument Number: 91172 www.vishay.com5IRFI9Z34GPbFDocument Number: 91172 www.vishay.com6IRFI9Z34GPbFTO-2

 ..2. Size:1415K  vishay
 irfi9z34g sihfi9z34g.pdf pdf_icon

IRFI9Z34G

IRFI9Z34G, SiHFI9Z34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.14RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 34 COMPLIANT P-ChannelQgs (nC) 9.9 175 C Operating TemperatureQgd (nC) 16 Dynamic dV/

 0.1. Size:1417K  vishay
 irfi9z34g-pbf sihfi9z34g.pdf pdf_icon

IRFI9Z34G

IRFI9Z34G, SiHFI9Z34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.14RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 34 COMPLIANT P-ChannelQgs (nC) 9.9 175 C Operating TemperatureQgd (nC) 16 Dynamic dV/

 6.1. Size:120K  international rectifier
 irfi9z34n.pdf pdf_icon

IRFI9Z34G

PD - 9.1530AIRFI9Z34NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = -55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.10 P-ChannelG Fully Avalanche RatedID = -14ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-r

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Datasheet: IRFI9620GPBF , IRFI9630GPBF , IRFI9634GPBF , IRFI9640GPBF , IRFI9Z14G , IRFI9Z14GPBF , IRFI9Z24G , IRFI9Z24GPBF , STP80NF70 , IRFI9Z34GPBF , IRFIB41N15DPBF , IRFIB5N50LPBF , IRFIB5N65APBF , IRFIB6N60APBF , IRFIB7N50APBF , IRFIB7N50LPBF , IRFIB8N50K .

History: IRFI9Z14GPBF | SE20075

Keywords - IRFI9Z34G MOSFET datasheet

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