IRFIB6N60APBF Todos los transistores

 ..1. Size:198K  international rectifier
 irfib6n60apbf.pdf

PD - 94838 SMPS MOSFET IRFIB6N60APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 600V 0.75 5.5A l High speed power switching l High Voltage Isolation = 2.5KVRMS l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness G

 4.1. Size:149K  international rectifier
 irfib6n60a.pdf

PD - 91813 SMPS MOSFET IRFIB6N60A HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 600V 0.75W 5.5A l High speed power switching l High Voltage Isolation = 2.5KVRMS Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized

 4.2. Size:139K  vishay
 irfib6n60a sihfib6n60a.pdf

IRFIB6N60A, SiHFIB6N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) ( )VGS = 10 V 0.75 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 49 COMPLIANT Ruggedness Qgs (nC) 13 Fully Characterized Capacitance and Qgd (nC) 20 Avalanche Voltage and Current Confi

 4.3. Size:275K  inchange semiconductor
 irfib6n60a.pdf

iscN-Channel MOSFET Transistor IRFIB6N60A FEATURES Low drain-source on-resistance RDS(ON) =0.75 (MAX) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL