IRFIB6N60APBF - параметры транзистора MOSFET, его аналоги, datasheet

IRFIB6N60APBF Datasheet (PDF)

..1. Size:198K international rectifier
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PD - 94838SMPS MOSFETIRFIB6N60APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 600V 0.75 5.5Al High speed power switchingl High Voltage Isolation = 2.5KVRMSl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt RuggednessG

4.1. Size:149K international rectifier
irfib6n60a.pdf pdf_icon

PD - 91813SMPS MOSFET IRFIB6N60AHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 600V 0.75W 5.5Al High speed power switchingl High Voltage Isolation = 2.5KVRMSBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized

4.2. Size:139K vishay
irfib6n60a sihfib6n60a.pdf pdf_icon

IRFIB6N60A, SiHFIB6N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600Requirement AvailableRDS(on) ()VGS = 10 V 0.75 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 49COMPLIANTRuggednessQgs (nC) 13 Fully Characterized Capacitance andQgd (nC) 20Avalanche Voltage and CurrentConfi

4.3. Size:275K inchange semiconductor
irfib6n60a.pdf pdf_icon

iscN-Channel MOSFET Transistor IRFIB6N60AFEATURESLow drain-source on-resistance:RDS(ON) =0.75 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

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