IRFIB7N50LPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFIB7N50LPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 46 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 6.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 92 nC

Tiempo de elevación (tr): 36 nS

Conductancia de drenaje-sustrato (Cd): 230 pF

Resistencia drenaje-fuente RDS(on): 0.38 Ohm

Empaquetado / Estuche: TO220F

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IRFIB7N50LPBF Datasheet (PDF)

1.1. irfib7n50lpbf.pdf Size:871K _upd

IRFIB7N50L, SiHFIB7N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Super Fast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications RoHS RDS(on) (Ω)VGS = 10 V 0.320 • Lower Gate Charge Results in Simpler Drive COMPLIANT Qg (Max.) (nC) 92 Reqirements Qgs (nC) 24 • Enhanced dV/dt Capabilities Offer Improved Qgd (nC) 44 Ruggedness

1.2. irfib7n50apbf.pdf Size:197K _upd

PD - 94805 SMPS MOSFET IRFIB7N50APbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.52Ω 6.6A High speed power switching High Voltage Isolation = 2.5KVRMS Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness G D S Ful

1.3. irfib7n50lpbf.pdf Size:219K _international_rectifier

PD - 95750 IRFIB7N50LPbF SMPS MOSFET HEXFET� Power MOSFET Applications Trr typ. � Zero Voltage Switching SMPS VDSS RDS(on) typ. ID � Telecom and Server Power Supplies 500V 320m? 85ns 6.8A � Uninterruptible Power Supplies � Motor Control applications � Lead-Free Features and Benefits � SuperFast body diode eliminates the need for external diodes in ZVS applications. � Lower Gate char

1.4. irfib7n50a.pdf Size:96K _international_rectifier

PD - 91810 SMPS MOSFET IRFIB7N50A HEXFET� Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.52? 6.6A High speed power switching High Voltage Isolation = 2.5KVRMS Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance

1.5. irfib7n50a sihfib7n50a.pdf Size:143K _vishay

IRFIB7N50A, SiHFIB7N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (?)VGS = 10 V 0.52 � Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness Qg (Max.) (nC) 52 � Fully Characterized Capacitance and Qgs (nC) 13 Avalanche Voltage and Current Qgd (nC) 18 � Effective Cos

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