IRFIB7N50LPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFIB7N50LPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 46 W
Tensión drenaje-fuente (Vds): 500 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 6.8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 5 V
Carga de compuerta (Qg): 92 nC
Tiempo de elevación (tr): 36 nS
Conductancia de drenaje-sustrato (Cd): 230 pF
Resistencia drenaje-fuente RDS(on): 0.38 Ohm
Empaquetado / Estuche: TO220F
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IRFIB7N50LPBF Datasheet (PDF)
1.1. irfib7n50lpbf.pdf 
Size:871K _upd
IRFIB7N50L, SiHFIB7N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Super Fast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications RoHS RDS(on) (Ω)VGS = 10 V 0.320 • Lower Gate Charge Results in Simpler Drive COMPLIANT Qg (Max.) (nC) 92 Reqirements Qgs (nC) 24 • Enhanced dV/dt Capabilities Offer Improved Qgd (nC) 44 Ruggedness
1.2. irfib7n50apbf.pdf Size:197K _upd
PD - 94805 SMPS MOSFET IRFIB7N50APbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.52Ω 6.6A High speed power switching High Voltage Isolation = 2.5KVRMS Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness G D S Ful
1.3. irfib7n50lpbf.pdf Size:219K _international_rectifier
PD - 95750 IRFIB7N50LPbF SMPS MOSFET HEXFET Power MOSFET Applications Trr typ. Zero Voltage Switching SMPS VDSS RDS(on) typ. ID Telecom and Server Power Supplies 500V 320m? 85ns 6.8A Uninterruptible Power Supplies Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate char
1.4. irfib7n50a.pdf Size:96K _international_rectifier
PD - 91810 SMPS MOSFET IRFIB7N50A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.52? 6.6A High speed power switching High Voltage Isolation = 2.5KVRMS Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance
1.5. irfib7n50a sihfib7n50a.pdf Size:143K _vishay
IRFIB7N50A, SiHFIB7N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (?)VGS = 10 V 0.52 Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness Qg (Max.) (nC) 52 Fully Characterized Capacitance and Qgs (nC) 13 Avalanche Voltage and Current Qgd (nC) 18 Effective Cos
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