Справочник MOSFET. IRFIB7N50LPBF

 

IRFIB7N50LPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFIB7N50LPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 46 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 92 nC
   trⓘ - Время нарастания: 36 ns
   Cossⓘ - Выходная емкость: 230 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm
   Тип корпуса: TO220F

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IRFIB7N50LPBF Datasheet (PDF)

 ..1. Size:219K  international rectifier
 irfib7n50lpbf.pdf

IRFIB7N50LPBF IRFIB7N50LPBF

PD - 95750IRFIB7N50LPbFSMPS MOSFETHEXFET Power MOSFETApplicationsTrr typ. Zero Voltage Switching SMPS VDSS RDS(on) typ. ID Telecom and Server Power Supplies500V 320m 85ns 6.8A Uninterruptible Power Supplies Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications.

 ..2. Size:871K  vishay
 irfib7n50lpbf.pdf

IRFIB7N50LPBF IRFIB7N50LPBF

IRFIB7N50L, SiHFIB7N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Super Fast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS ApplicationsRoHSRDS(on) ()VGS = 10 V 0.320 Lower Gate Charge Results in Simpler Drive COMPLIANT Qg (Max.) (nC) 92ReqirementsQgs (nC) 24 Enhanced dV/dt Capabilities Offer ImprovedQgd (nC) 44Ruggedness

 5.1. Size:197K  international rectifier
 irfib7n50apbf.pdf

IRFIB7N50LPBF IRFIB7N50LPBF

PD - 94805SMPS MOSFETIRFIB7N50APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.52 6.6A High speed power switching High Voltage Isolation = 2.5KVRMS Lead-FreeBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt RuggednessG D S Ful

 5.2. Size:96K  international rectifier
 irfib7n50a.pdf

IRFIB7N50LPBF IRFIB7N50LPBF

PD - 91810SMPS MOSFET IRFIB7N50AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.52 6.6A High speed power switching High Voltage Isolation = 2.5KVRMS Benefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capaci

 5.3. Size:143K  vishay
 irfib7n50a sihfib7n50a.pdf

IRFIB7N50LPBF IRFIB7N50LPBF

IRFIB7N50A, SiHFIB7N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500Requirement AvailableRDS(on) ()VGS = 10 V 0.52 Improved Gate, Avalanche and Dynamic dV/dtRoHS*COMPLIANTRuggednessQg (Max.) (nC) 52 Fully Characterized Capacitance andQgs (nC) 13Avalanche Voltage and CurrentQgd (nC) 18 E

 5.4. Size:274K  inchange semiconductor
 irfib7n50a.pdf

IRFIB7N50LPBF IRFIB7N50LPBF

iscN-Channel MOSFET Transistor IRFIB7N50AFEATURESLow drain-source on-resistance:RDS(ON) =0.52 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

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