IRFIBC30GPBF Todos los transistores

 

IRFIBC30GPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFIBC30GPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 86 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm

Encapsulados: TO220F

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IRFIBC30GPBF datasheet

 ..1. Size:928K  vishay
 irfibc30gpbf.pdf pdf_icon

IRFIBC30GPBF

IRFIBC30G, SiHFIBC30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 2.2 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 31 Dynamic dV/dt Rating Qgs (nC) 4.6 Low Thermal Resistance Qgd (nC) 17 Lead (Pb)-

 5.1. Size:284K  international rectifier
 irfibc30g.pdf pdf_icon

IRFIBC30GPBF

PD - 95611 IRFIBC30GPbF Lead-Free 7/29/04 Document Number 91180 www.vishay.com 1 IRFIBC30GPbF Document Number 91180 www.vishay.com 2 IRFIBC30GPbF Document Number 91180 www.vishay.com 3 IRFIBC30GPbF Document Number 91180 www.vishay.com 4 IRFIBC30GPbF Document Number 91180 www.vishay.com 5 IRFIBC30GPbF Document Number 91180 www.vishay.com 6 IRFIBC30GPbF Peak

 5.2. Size:923K  vishay
 irfibc30g sihfibc30g.pdf pdf_icon

IRFIBC30GPBF

IRFIBC30G, SiHFIBC30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 2.2 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 31 Dynamic dV/dt Rating Qgs (nC) 4.6 Low Thermal Resistance Qgd (nC) 17 Lead (Pb)-

 5.3. Size:275K  inchange semiconductor
 irfibc30g.pdf pdf_icon

IRFIBC30GPBF

iscN-Channel MOSFET Transistor IRFIBC30G FEATURES Low drain-source on-resistance RDS(ON) =2.2 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

MOSTRAR MÁS

Otros transistores... IRFI9Z34GPBF , IRFIB41N15DPBF , IRFIB5N50LPBF , IRFIB5N65APBF , IRFIB6N60APBF , IRFIB7N50APBF , IRFIB7N50LPBF , IRFIB8N50K , STF13NM60N , IRL8113LPBF , IRL8113SPBF , IRL8114PBF , IRLB3034PBF , IRLB3036GPBF , IRLB3036PBF , IRLB3813PBF , IRLB4030PBF .

 

 

 


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