IRFN240 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFN240

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 105 max nS

Cossⓘ - Capacitancia de salida: 400 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm

Encapsulados: SMD1

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IRFN240 datasheet

 ..1. Size:167K  international rectifier
 irfn240.pdf pdf_icon

IRFN240

PD - 91548C IRFN240 JANTX2N7219U JANTXV2N7219U POWER MOSFET REF MIL-PRF-19500/596 SURFACE MOUNT(SMD-1) 200V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN240 0.18 18A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re-

 0.1. Size:23K  semelab
 irfn240smd.pdf pdf_icon

IRFN240

IRFN240SMD MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET VDSS 200V ID(cont) 13.9A RDS(on) 0.180 FEATURES HERMETICALLY SEALED SURFACE MOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OF PCB SPACE. SIMPLE DRIVE REQUIREMENTS

 9.1. Size:155K  international rectifier
 irfn250.pdf pdf_icon

IRFN240

PD - 91549C IRFN250 JANTX2N7225U JANTXV2N7225U POWER MOSFET REF MIL-PRF-19500/592 SURFACE MOUNT(SMD-1) 200V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN250 0.100 27.4A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re

 9.2. Size:605K  fairchild semi
 irfn214bta fp001.pdf pdf_icon

IRFN240

IRFN214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.6A, 250V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.1 nC) planar, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored to Fast switching min

MOSTRAR MÁS

Otros transistores... IRFM460, IRFM9140, IRFM9240, IRFN044, IRFN054, IRFN130, IRFN140, IRFN150, BS170, IRFN250, IRFN340, IRFN350, IRFN440, IRFN450, IRFN9130, IRFN9130SMD, IRFN9140