All MOSFET. IRFN240 Datasheet

 

IRFN240 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFN240
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 60(max) nC
   trⓘ - Rise Time: 105(max) nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: SMD1

 IRFN240 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFN240 Datasheet (PDF)

 ..1. Size:167K  international rectifier
 irfn240.pdf

IRFN240 IRFN240

PD - 91548CIRFN240JANTX2N7219UJANTXV2N7219UPOWER MOSFETREF:MIL-PRF-19500/596SURFACE MOUNT(SMD-1) 200V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN240 0.18 18AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-

 0.1. Size:23K  semelab
 irfn240smd.pdf

IRFN240 IRFN240

IRFN240SMDMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 200V ID(cont) 13.9A RDS(on) 0.180FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS

 9.1. Size:155K  international rectifier
 irfn250.pdf

IRFN240 IRFN240

PD - 91549CIRFN250JANTX2N7225UJANTXV2N7225UPOWER MOSFETREF:MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 200V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN250 0.100 27.4AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re

 9.2. Size:605K  fairchild semi
 irfn214bta fp001.pdf

IRFN240 IRFN240

IRFN214B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.6A, 250V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.1 nC)planar, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been especially tailored to Fast switchingmin

 9.3. Size:23K  semelab
 irfn250smd.pdf

IRFN240 IRFN240

IRFN250SMDMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 200V ID(cont) 14A RDS(on) 0.100FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS

 9.4. Size:226K  semelab
 irfn254.pdf

IRFN240 IRFN240

Datasheet: IRFM460 , IRFM9140 , IRFM9240 , IRFN044 , IRFN054 , IRFN130 , IRFN140 , IRFN150 , 4435 , IRFN250 , IRFN340 , IRFN350 , IRFN440 , IRFN450 , IRFN9130 , IRFN9130SMD , IRFN9140 .

History: BF1212

 

 
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