IRL6283M Todos los transistores

 ..1. Size:510K  international rectifier
 irl6283m.pdf

StrongIRFET IRL6283MTRPbF DirectFET N-Channel Power MOSFET Applications Typical values (unless otherwise specified) ORing, eFuse, and high current load switch VDSS VGS Vgs(th) RDS(on) RDS(on) RDS(on) Load switch for battery 20V max 12V max 0.8V 0.50m @10V 0.65m @4.5V 1.1m @2.5V application Inverter switches for DC motor application S S

 9.1. Size:196K  1
 irl620a.pdf

 9.2. Size:41K  1
 irl621 irl631 irl641.pdf

 9.3. Size:1412K  international rectifier
 irl620spbf.pdf

PD- 95591 IRL620SPbF Lead-Free 07/21/04 Document Number 91302 www.vishay.com 1 IRL620SPbF Document Number 91302 www.vishay.com 2 IRL620SPbF Document Number 91302 www.vishay.com 3 IRL620SPbF Document Number 91302 www.vishay.com 4 IRL620SPbF Document Number 91302 www.vishay.com 5 IRL620SPbF Document Number 91302 www.vishay.com 6 IRL620SPbF Peak Diode Recovery

 9.4. Size:260K  international rectifier
 irl6297sdpbf.pdf

IRL6297SDPbF DirectFET Dual N-Channel Power MOSFET Typical values (unless otherwise specified) Applications VDSS VGS RDS(on) RDS(on) l Charge and Discharge Switch for Battery Application l Isolation Switch for Input Power or Battery Application 20V max 12V max 3.8m @4.5V 5.4m @2.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Features and Benefits 27nC 9.5nC 1.4nC 21nC 15nC 0.80V l

 9.5. Size:334K  international rectifier
 irl620s.pdf

PD -9.1218 IRL620S HEXFET Power MOSFET Surface Mount Available in Tape & Reel VDSS = 200V Dynamic dv/dt Rating Repetitive Avalanche Rated RDS(on) = 0.80 Logic-Level Gate Drive RDS(on) Specified at VGS=4V & 5V Fast Switching ID = 5.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized

 9.6. Size:287K  international rectifier
 irl620.pdf

PD -9.1217 IRL620 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated VDSS = 200V Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V RDS(on) = 0.80 Fast Switching Ease of paralleling Simple Drive Requirements ID = 5.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, rug

 9.7. Size:1359K  international rectifier
 irl620pbf.pdf

PD- 95670 IRL620PbF Lead-Free 8/2/04 Document Number 91301 www.vishay.com 1 IRL620PbF Document Number 91301 www.vishay.com 2 IRL620PbF Document Number 91301 www.vishay.com 3 IRL620PbF Document Number 91301 www.vishay.com 4 IRL620PbF Document Number 91301 www.vishay.com 5 IRL620PbF Document Number 91301 www.vishay.com 6 IRL620PbF Document Number 91301 www.v

 9.8. Size:18K  samsung
 irlz1x irlz2x irlz3x irlz4x irl51x irl52x irl53x irl54x irl61x irl62x irl63x irl64x.pdf

 9.9. Size:2134K  vishay
 irl620s sihl620s.pdf

IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface Mount VDS (V) 200 Available Available in Tape and Reel RDS(on) ( )VGS = 10 V 0.80 RoHS* Dynamic dV/dt Rating COMPLIANT Qg (Max.) (nC) 16 Repetitive Avalanche Rated Qgs (nC) 2.9 Logic Level Gate Drive Qgd (nC) 9.6 RDS(on) Specified at VGS = 4 V and 5 V Configuration Singl

 9.10. Size:2119K  vishay
 irl620 sihl620.pdf

IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.80 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 16 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 2.7 Fast Switching Qgd (nC) 9.6 Ease of paralleling Configuration Single

 9.11. Size:1464K  vishay
 irl620spbf sihl620s.pdf

IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 Surface Mount RDS(on) ( )VGS = 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 16 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.9 Logic Level Gate Drive Qgd (nC) 9.6 RDS(on) Specified at VGS = 4 V

 9.12. Size:2122K  vishay
 irl620pbf sihl620.pdf

IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.80 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 16 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 2.7 Fast Switching Qgd (nC) 9.6 Ease of paralleling Configuration Single

 9.13. Size:1439K  vishay
 irl620s sihl620s 2.pdf

IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 Surface Mount RDS(on) ( )VGS = 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 16 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.9 Logic Level Gate Drive Qgd (nC) 9.6 RDS(on) Specified at VGS = 4 V