IRL6283M MOSFET. Datasheet pdf. Equivalent

   Type Designator: IRL6283M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 38 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 105 nC
   trⓘ - Rise Time: 160 nS
   Cossⓘ - Output Capacitance: 2012 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00075 Ohm
   Package: DIRECTFET

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IRL6283M Datasheet (PDF)

..1. Size:510K international rectifier
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StrongIRFET IRL6283MTRPbF DirectFET N-Channel Power MOSFET Applications Typical values (unless otherwise specified) ORing, eFuse, and high current load switchVDSS VGS Vgs(th) RDS(on) RDS(on) RDS(on) Load switch for battery 20V max 12V max 0.8V 0.50m@10V 0.65m@4.5V 1.1m@2.5V applicationInverter switches for DC motor application S S

9.1. Size:196K 1
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9.2. Size:41K 1
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9.3. Size:1412K international rectifier
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PD- 95591IRL620SPbF Lead-Free07/21/04Document Number: 91302 www.vishay.com1IRL620SPbFDocument Number: 91302 www.vishay.com2IRL620SPbFDocument Number: 91302 www.vishay.com3IRL620SPbFDocument Number: 91302 www.vishay.com4IRL620SPbFDocument Number: 91302 www.vishay.com5IRL620SPbFDocument Number: 91302 www.vishay.com6IRL620SPbFPeak Diode Recovery

9.4. Size:260K international rectifier
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IRL6297SDPbFDirectFET Dual N-Channel Power MOSFET Typical values (unless otherwise specified)ApplicationsVDSS VGS RDS(on) RDS(on) l Charge and Discharge Switch for Battery Applicationl Isolation Switch for Input Power or Battery Application 20V max 12V max 3.8m@4.5V 5.4m@2.5VQg tot Qgd Qgs2 Qrr Qoss Vgs(th) Features and Benefits27nC 9.5nC 1.4nC 21nC 15nC 0.80Vl

9.5. Size:334K international rectifier
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PD -9.1218IRL620SHEXFET Power MOSFETSurface MountAvailable in Tape & ReelVDSS = 200VDynamic dv/dt RatingRepetitive Avalanche RatedRDS(on) = 0.80Logic-Level Gate DriveRDS(on) Specified at VGS=4V & 5VFast SwitchingID = 5.2ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized

9.6. Size:287K international rectifier
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PD -9.1217IRL620HEXFET Power MOSFETDynamic dv/dt RatingRepetitive Avalanche RatedVDSS = 200VLogic-Level Gate DriveRDS(ON) Specified at VGS = 4V & 5VRDS(on) = 0.80Fast SwitchingEase of parallelingSimple Drive RequirementsID = 5.2ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, rug

9.7. Size:1359K international rectifier
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PD- 95670IRL620PbF Lead-Free8/2/04Document Number: 91301 www.vishay.com1IRL620PbFDocument Number: 91301 www.vishay.com2IRL620PbFDocument Number: 91301 www.vishay.com3IRL620PbFDocument Number: 91301 www.vishay.com4IRL620PbFDocument Number: 91301 www.vishay.com5IRL620PbFDocument Number: 91301 www.vishay.com6IRL620PbFDocument Number: 91301 www.v

9.8. Size:18K samsung
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9.9. Size:2134K vishay
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IRL620S, SiHL620SVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Surface MountVDS (V) 200Available Available in Tape and ReelRDS(on) ()VGS = 10 V 0.80RoHS* Dynamic dV/dt RatingCOMPLIANTQg (Max.) (nC) 16 Repetitive Avalanche RatedQgs (nC) 2.9 Logic Level Gate DriveQgd (nC) 9.6 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Singl

9.10. Size:2119K vishay
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IRL620, SiHL620Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.80 RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 16 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 2.7 Fast SwitchingQgd (nC) 9.6 Ease of parallelingConfiguration Single

9.11. Size:1464K vishay
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IRL620S, SiHL620SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 10 V 0.80 Available in Tape and ReelQg (Max.) (nC) 16 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.9 Logic Level Gate DriveQgd (nC) 9.6 RDS(on) Specified at VGS = 4 V

9.12. Size:2122K vishay
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