IRL510SPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRL510S, SiHL510SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 5 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 6.1 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.6 Logic-Level Gate DriveQgd (nC) 3.3 RDS(on) Specified at VGS = 4

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IRL510S, SiHL510SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 5 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 6.1 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.6 Logic-Level Gate DriveQgd (nC) 3.3 RDS(on) Specified at VGS = 4

PD - 95406IRL510PbF Lead-Free6/17/04Document Number: 91297 www.vishay.com1IRL510PbFDocument Number: 91297 www.vishay.com2IRL510PbFDocument Number: 91297 www.vishay.com3IRL510PbFDocument Number: 91297 www.vishay.com4IRL510PbFDocument Number: 91297 www.vishay.com5IRL510PbFDocument Number: 91297 www.vishay.com6IRL510PbFTO-220AB Package Outline

IRL510AFEATURESBVDSS = 100 V Logic-Level Gate DriveRDS(on) = 0.44 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 5.6 A Lower Input Capacitance Improved Gate ChargeTO-220 Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 100V Lower RDS(ON): 0.336 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maxi

Advanced Power MOSFETFEATURESBVDSS = 100 V Logic-Level Gate DriveRDS(on) = 0.44 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 5.6 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.336 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Rating

IRL510, SiHL510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.54RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 6.1 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 2.6 175 C Operating TemperatureQgd (nC) 3.3 Fast SwitchingConfiguration Si

IRL510, SiHL510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.54RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 6.1 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 2.6 175 C Operating TemperatureQgd (nC) 3.3 Fast SwitchingConfiguration Si