Справочник MOSFET. IRL510SPBF

 

IRL510SPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRL510SPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 43 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.6 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 6.1 nC
   trⓘ - Время нарастания: 47 ns
   Cossⓘ - Выходная емкость: 80 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.54 Ohm
   Тип корпуса: TO263

 Аналог (замена) для IRL510SPBF

 

 

IRL510SPBF Datasheet (PDF)

 ..1. Size:297K  vishay
 irl510spbf sihl510s.pdf

IRL510SPBF IRL510SPBF

IRL510S, SiHL510SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 5 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 6.1 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.6 Logic-Level Gate DriveQgd (nC) 3.3 RDS(on) Specified at VGS = 4

 7.1. Size:163K  international rectifier
 irl510s.pdf

IRL510SPBF IRL510SPBF

Document Number: 90380 www.vishay.com1313Document Number: 90380 www.vishay.com1314Document Number: 90380 www.vishay.com1315Document Number: 90380 www.vishay.com1316Document Number: 90380 www.vishay.com1317Document Number: 90380 www.vishay.com1318Legal Disclaimer NoticeVishayNoticeThe products described herein were acquired by Vishay Intertechnology, Inc., as

 7.2. Size:272K  vishay
 irl510s sihl510s.pdf

IRL510SPBF IRL510SPBF

IRL510S, SiHL510SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 5 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 6.1 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.6 Logic-Level Gate DriveQgd (nC) 3.3 RDS(on) Specified at VGS = 4

 8.1. Size:227K  international rectifier
 irl510pbf.pdf

IRL510SPBF IRL510SPBF

PD - 95406IRL510PbF Lead-Free6/17/04Document Number: 91297 www.vishay.com1IRL510PbFDocument Number: 91297 www.vishay.com2IRL510PbFDocument Number: 91297 www.vishay.com3IRL510PbFDocument Number: 91297 www.vishay.com4IRL510PbFDocument Number: 91297 www.vishay.com5IRL510PbFDocument Number: 91297 www.vishay.com6IRL510PbFTO-220AB Package Outline

 8.2. Size:169K  international rectifier
 irl510.pdf

IRL510SPBF IRL510SPBF

 8.3. Size:242K  fairchild semi
 irl510a.pdf

IRL510SPBF IRL510SPBF

IRL510AFEATURESBVDSS = 100 V Logic-Level Gate DriveRDS(on) = 0.44 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 5.6 A Lower Input Capacitance Improved Gate ChargeTO-220 Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 100V Lower RDS(ON): 0.336 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maxi

 8.4. Size:885K  samsung
 irl510a.pdf

IRL510SPBF IRL510SPBF

Advanced Power MOSFETFEATURESBVDSS = 100 V Logic-Level Gate DriveRDS(on) = 0.44 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 5.6 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.336 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Rating

 8.5. Size:1077K  vishay
 irl510pbf sihl510.pdf

IRL510SPBF IRL510SPBF

IRL510, SiHL510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.54RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 6.1 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 2.6 175 C Operating TemperatureQgd (nC) 3.3 Fast SwitchingConfiguration Si

 8.6. Size:1074K  vishay
 irl510 sihl510.pdf

IRL510SPBF IRL510SPBF

IRL510, SiHL510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.54RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 6.1 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 2.6 175 C Operating TemperatureQgd (nC) 3.3 Fast SwitchingConfiguration Si

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