IRL3705NPBF Todos los transistores

 

IRL3705NPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRL3705NPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 170 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 89 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 140 nS
   Cossⓘ - Capacitancia de salida: 870 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: TO220AB
     - Selección de transistores por parámetros

 

IRL3705NPBF Datasheet (PDF)

 ..1. Size:481K  international rectifier
irl3705npbf.pdf pdf_icon

IRL3705NPBF

PD - 94960IRL3705NPbF Lead-Freewww.irf.com 1 IRL3705NPbF2 www.irf.comIRL3705NPbFwww.irf.com 3IRL3705NPbF4 www.irf.comIRL3705NPbFwww.irf.com 5IRL3705NPbF6 www.irf.comIRL3705NPbFPeak Diode Recovery dv/dt Test Circuit *

 6.1. Size:297K  international rectifier
irl3705nspbf irl3705nlpbf.pdf pdf_icon

IRL3705NPBF

PD - 95381IRL3705NSPbFl Logic-Level Gate DriveIRL3705NLPbFl Advanced Process Technologyl Surface Mount (IRL3705NS) HEXFET Power MOSFETl Low-profile through-hole (IRL3705NL)Dl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.01l Lead-FreeGDescriptionFifth Generation HEXFETs from International RectifierID = 89AS

 6.2. Size:1024K  international rectifier
auirl3705n.pdf pdf_icon

IRL3705NPBF

PD - 96352AUTOMOTIVE GRADEAUIRL3705NFeaturesHEXFET Power MOSFET Advanced Planar TechnologyD Logic-Level Gate DriveV(BR)DSS55V Dynamic dV/dT Rating 175C Operating TemperatureRDS(on) max.0.01 Fast SwitchingG Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxID S 89A Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSSp

 6.3. Size:106K  international rectifier
irl3705n.pdf pdf_icon

IRL3705NPBF

PD - 9.1370CIRL3705NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.01 Fast SwitchingG Fully Avalanche RatedID = 89A SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance pe

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: NCE65N260F | VBZE50P03 | FCH20N60 | PM561BA | IPB60R190C6 | DMN6075S

 

 
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