IRL3502PBF Todos los transistores

 

IRL3502PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRL3502PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 140 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 110 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 140 nS
   Cossⓘ - Capacitancia de salida: 1900 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: TO220AB
     - Selección de transistores por parámetros

 

IRL3502PBF Datasheet (PDF)

 ..1. Size:176K  international rectifier
 irl3502pbf.pdf pdf_icon

IRL3502PBF

PD - 94879IRL3502PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Optimized for 4.5V-7.0V Gate DriveVDSS = 20Vl Ideal for CPU Core DC-DC Convertersl Fast SwitchingRDS(on) = 0.007l Lead-FreeGID = 110ADescriptionSThese HEXFET Power MOSFETs were designedspecifically to meet the demands of CPU core DC-DCconverters in the PC environment. Advancedproce

 7.1. Size:76K  international rectifier
 irl3502.pdf pdf_icon

IRL3502PBF

PD 9.1698AIRL3502PRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Optimized for 4.5V-7.0V Gate DriveVDSS = 20V Ideal for CPU Core DC-DC Converters Fast SwitchingRDS(on) = 0.007GID = 110A DescriptionSThese HEXFET Power MOSFETs were designedspecifically to meet the demands of CPU core DC-DCconverters. Advanced processing techniquescombined with

 7.2. Size:242K  international rectifier
 irl3502spbf.pdf pdf_icon

IRL3502PBF

IRL3502SPbF l Dl l l l Gl Description S

 7.3. Size:128K  international rectifier
 irl3502s.pdf pdf_icon

IRL3502PBF

PD -9.1676AIRL3502SPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Surface MountVDSS = 20V Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC ConvertersRDS(on) = 0.007W Fast SwitchingGID = 110A Description SThese HEXFET Power MOSFETs were designedspecifically to meet the demands of CPU core DC-DCconverters in the PC environment. Advanced

MOSTRAR MÁS

Otros transistores... IRL3705NPBF , IRL3705NSPBF , IRL3705ZLPBF , IRL3705ZPBF , IRL3705ZSPBF , IRL3713L , IRL3713PBF , IRL3713SPBF , IRF830 , IRL3502SPBF , IRL1004LPBF , IRL1004PBF , IRL1004SPBF , IRL1104 , IRL1104L , IRL1104LPBF , IRL1104PBF .

History: IXTP50N28T | 3SK249

 

 
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