IRL3502SPBF Todos los transistores

 

IRL3502SPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRL3502SPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 140 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 110 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 140 nS
   Cossⓘ - Capacitancia de salida: 1900 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: TO263

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IRL3502SPBF Datasheet (PDF)

 ..1. Size:242K  international rectifier
irl3502spbf.pdf

IRL3502SPBF
IRL3502SPBF

IRL3502SPbF l Dl l l l Gl Description S

 6.1. Size:128K  international rectifier
irl3502s.pdf

IRL3502SPBF
IRL3502SPBF

PD -9.1676AIRL3502SPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Surface MountVDSS = 20V Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC ConvertersRDS(on) = 0.007W Fast SwitchingGID = 110A Description SThese HEXFET Power MOSFETs were designedspecifically to meet the demands of CPU core DC-DCconverters in the PC environment. Advanced

 7.1. Size:76K  international rectifier
irl3502.pdf

IRL3502SPBF
IRL3502SPBF

PD 9.1698AIRL3502PRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Optimized for 4.5V-7.0V Gate DriveVDSS = 20V Ideal for CPU Core DC-DC Converters Fast SwitchingRDS(on) = 0.007GID = 110A DescriptionSThese HEXFET Power MOSFETs were designedspecifically to meet the demands of CPU core DC-DCconverters. Advanced processing techniquescombined with

 7.2. Size:176K  international rectifier
irl3502pbf.pdf

IRL3502SPBF
IRL3502SPBF

PD - 94879IRL3502PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Optimized for 4.5V-7.0V Gate DriveVDSS = 20Vl Ideal for CPU Core DC-DC Convertersl Fast SwitchingRDS(on) = 0.007l Lead-FreeGID = 110ADescriptionSThese HEXFET Power MOSFETs were designedspecifically to meet the demands of CPU core DC-DCconverters in the PC environment. Advancedproce

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