IRL1004SPBF Todos los transistores

 ..1. Size:210K  international rectifier
 irl1004lpbf irl1004spbf.pdf

PD - 95575 IRL1004SPbF IRL1004LPbF l Logic-Level Gate Drive HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 40V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.0065 l Fully Avalanche Rated G l Lead-Free ID = 130A Description S Fifth Generation HEXFET power MOSFETs from International Rectifier u

 6.1. Size:123K  international rectifier
 irl1004s irl1004l.pdf

PD - 91644A IRL1004S IRL1004L Logic-Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D VDSS = 40V Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching RDS(on) = 0.0065 G Fully Avalanche Rated Description ID = 130A S Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing

 6.2. Size:252K  inchange semiconductor
 irl1004s.pdf

isc N-Channel MOSFET Transistor IRL1004S FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 7.1. Size:89K  international rectifier
 irl1004.pdf

PD - 91702B IRL1004 HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 40V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.0065 175 C Operating Temperature G Fast Switching ID = 130A Fully Avalanche Rated S Description Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques

 7.2. Size:159K  international rectifier
 irl1004pbf.pdf

PD - 95403 IRL1004PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D VDSS = 40V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.0065 l Fast Switching G l Fully Avalanche Rated ID = 130A l Lead-Free S Description Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced

 7.3. Size:245K  inchange semiconductor
 irl1004.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL1004 IIRL1004 FEATURES Static drain-source on-resistance RDS(on) 6.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R