All MOSFET. IRL1004SPBF Datasheet

 

IRL1004SPBF Datasheet and Replacement


   Type Designator: IRL1004SPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 210 nS
   Cossⓘ - Output Capacitance: 1480 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO263
 

 IRL1004SPBF substitution

   - MOSFET ⓘ Cross-Reference Search

 

IRL1004SPBF Datasheet (PDF)

 ..1. Size:210K  international rectifier
irl1004lpbf irl1004spbf.pdf pdf_icon

IRL1004SPBF

PD - 95575IRL1004SPbFIRL1004LPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 40Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.0065l Fully Avalanche RatedGl Lead-FreeID = 130ADescriptionSFifth Generation HEXFET power MOSFETs fromInternational Rectifier u

 6.1. Size:123K  international rectifier
irl1004s irl1004l.pdf pdf_icon

IRL1004SPBF

PD - 91644AIRL1004S IRL1004L Logic-Level Gate DriveHEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance DVDSS = 40V Dynamic dv/dt Rating 175C Operating Temperature Fast Switching RDS(on) = 0.0065G Fully Avalanche RatedDescriptionID = 130A SFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processing

 6.2. Size:252K  inchange semiconductor
irl1004s.pdf pdf_icon

IRL1004SPBF

isc N-Channel MOSFET Transistor IRL1004SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

 7.1. Size:89K  international rectifier
irl1004.pdf pdf_icon

IRL1004SPBF

PD - 91702BIRL1004HEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process Technology VDSS = 40V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.0065 175C Operating TemperatureG Fast SwitchingID = 130A Fully Avalanche RatedSDescriptionFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processing techniques

Datasheet: IRL3705ZSPBF , IRL3713L , IRL3713PBF , IRL3713SPBF , IRL3502PBF , IRL3502SPBF , IRL1004LPBF , IRL1004PBF , 7N60 , IRL1104 , IRL1104L , IRL1104LPBF , IRL1104PBF , IRL1104S , IRL1104SPBF , IRL1404LPBF , IRL1404PBF .

History: SIS444DN | KMB6D6N30Q | NP16N06YLL | IRL3705ZSPBF | IPI65R380C6 | SSF7NS70UGX | STB30NF10

Keywords - IRL1004SPBF MOSFET datasheet

 IRL1004SPBF cross reference
 IRL1004SPBF equivalent finder
 IRL1004SPBF lookup
 IRL1004SPBF substitution
 IRL1004SPBF replacement

 

 
Back to Top

 


 
.