IRL1104 Todos los transistores

 

IRL1104 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRL1104

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 167 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 104 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 257 nS

Cossⓘ - Capacitancia de salida: 1065 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: TO220AB

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IRL1104 datasheet

 ..1. Size:167K  international rectifier
 irl1104pbf.pdf pdf_icon

IRL1104

PD - 95404 IRL1104PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 40V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.008 l Fast Switching G l Fully Avalanche Rated l Lead-Free ID = 104A S Description Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced

 ..2. Size:95K  international rectifier
 irl1104.pdf pdf_icon

IRL1104

PD -91805 IRL1104 HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 40V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.008 G Fast Switching Fully Avalanche Rated ID = 104AU S Description Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to

 0.1. Size:192K  international rectifier
 irl1104s.pdf pdf_icon

IRL1104

PD -91840 PRELIMINARY IRL1104S/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 40V Surface Mount (IRL1104S) Low-profile through-hole (IRL1104L) 175 C Operating Temperature RDS(on) = 0.008 Fast Switching G Fully Avalanche Rated ID = 104A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processin

 0.2. Size:141K  international rectifier
 irl1104l irl1104s.pdf pdf_icon

IRL1104

PD -91840 PRELIMINARY IRL1104S/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 40V Surface Mount (IRL1104S) Low-profile through-hole (IRL1104L) 175 C Operating Temperature RDS(on) = 0.008 Fast Switching G Fully Avalanche Rated ID = 104A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processin

MOSTRAR MÁS

Otros transistores... IRL3713L , IRL3713PBF , IRL3713SPBF , IRL3502PBF , IRL3502SPBF , IRL1004LPBF , IRL1004PBF , IRL1004SPBF , 18N50 , IRL1104L , IRL1104LPBF , IRL1104PBF , IRL1104S , IRL1104SPBF , IRL1404LPBF , IRL1404PBF , IRL1404SPBF .

History: IRL3715SPBF

 

 

 

 

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