IRL1104L MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRL1104L datasheet

..1. Size:141K international rectifier
irl1104l irl1104s.pdf pdf_icon

PD -91840 PRELIMINARY IRL1104S/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 40V Surface Mount (IRL1104S) Low-profile through-hole (IRL1104L) 175 C Operating Temperature RDS(on) = 0.008 Fast Switching G Fully Avalanche Rated ID = 104A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processin

..2. Size:226K international rectifier
irl1104lpbf irl1104spbf.pdf pdf_icon

PD -95576 IRL1104SPbF IRL1104LPbF l Logic-Level Gate Drive HEXFET Power MOSFET l Advanced Process Technology l Surface Mount (IRL1104S) D VDSS = 40V l Low-profile through-hole (IRL1104L) l 175 C Operating Temperature RDS(on) = 0.008 l Fast Switching G l Fully Avalanche Rated ID = 104A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier util

7.1. Size:167K international rectifier
irl1104pbf.pdf pdf_icon

PD - 95404 IRL1104PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 40V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.008 l Fast Switching G l Fully Avalanche Rated l Lead-Free ID = 104A S Description Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced

7.2. Size:95K international rectifier
irl1104.pdf pdf_icon

PD -91805 IRL1104 HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 40V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.008 G Fast Switching Fully Avalanche Rated ID = 104AU S Description Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to