IRL1104L Specs and Replacement

Type Designator: IRL1104L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 167 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 104 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 257 nS

Cossⓘ - Output Capacitance: 1065 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO262

IRL1104L substitution

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IRL1104L datasheet

 ..1. Size:141K  international rectifier
 irl1104l irl1104s.pdf pdf_icon

IRL1104L

PD -91840 PRELIMINARY IRL1104S/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 40V Surface Mount (IRL1104S) Low-profile through-hole (IRL1104L) 175 C Operating Temperature RDS(on) = 0.008 Fast Switching G Fully Avalanche Rated ID = 104A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processin... See More ⇒

 ..2. Size:226K  international rectifier
 irl1104lpbf irl1104spbf.pdf pdf_icon

IRL1104L

PD -95576 IRL1104SPbF IRL1104LPbF l Logic-Level Gate Drive HEXFET Power MOSFET l Advanced Process Technology l Surface Mount (IRL1104S) D VDSS = 40V l Low-profile through-hole (IRL1104L) l 175 C Operating Temperature RDS(on) = 0.008 l Fast Switching G l Fully Avalanche Rated ID = 104A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier util... See More ⇒

 7.1. Size:167K  international rectifier
 irl1104pbf.pdf pdf_icon

IRL1104L

PD - 95404 IRL1104PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 40V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.008 l Fast Switching G l Fully Avalanche Rated l Lead-Free ID = 104A S Description Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced ... See More ⇒

 7.2. Size:95K  international rectifier
 irl1104.pdf pdf_icon

IRL1104L

PD -91805 IRL1104 HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 40V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.008 G Fast Switching Fully Avalanche Rated ID = 104AU S Description Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to... See More ⇒

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Detailed specifications: IRL3713PBF, IRL3713SPBF, IRL3502PBF, IRL3502SPBF, IRL1004LPBF, IRL1004PBF, IRL1004SPBF, IRL1104, 20N50, IRL1104LPBF, IRL1104PBF, IRL1104S, IRL1104SPBF, IRL1404LPBF, IRL1404PBF, IRL1404SPBF, IRL1404ZPBF

Keywords - IRL1104L MOSFET specs

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