IRL1104S Todos los transistores

 

IRL1104S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRL1104S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 167 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 104 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 257 nS
   Cossⓘ - Capacitancia de salida: 1065 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO263
     - Selección de transistores por parámetros

 

IRL1104S Datasheet (PDF)

 ..1. Size:192K  international rectifier
 irl1104s.pdf pdf_icon

IRL1104S

PD -91840PRELIMINARYIRL1104S/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 40V Surface Mount (IRL1104S) Low-profile through-hole (IRL1104L) 175C Operating Temperature RDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 104A SDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processin

 ..2. Size:141K  international rectifier
 irl1104l irl1104s.pdf pdf_icon

IRL1104S

PD -91840PRELIMINARYIRL1104S/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 40V Surface Mount (IRL1104S) Low-profile through-hole (IRL1104L) 175C Operating Temperature RDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 104A SDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processin

 ..3. Size:226K  international rectifier
 irl1104lpbf irl1104spbf.pdf pdf_icon

IRL1104S

PD -95576IRL1104SPbFIRL1104LPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRL1104S) DVDSS = 40Vl Low-profile through-hole (IRL1104L)l 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier util

 7.1. Size:167K  international rectifier
 irl1104pbf.pdf pdf_icon

IRL1104S

PD - 95404IRL1104PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 40Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche Ratedl Lead-Free ID = 104ASDescriptionFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AO8803 | SSF3641 | KP771A | 2N7121 | FDC3612

 

 
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