IRL1104S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRL1104S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 167 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 104 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 257 nS

Cossⓘ - Capacitancia de salida: 1065 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: TO263

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IRL1104S datasheet

 ..1. Size:192K  international rectifier
 irl1104s.pdf pdf_icon

IRL1104S

PD -91840 PRELIMINARY IRL1104S/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 40V Surface Mount (IRL1104S) Low-profile through-hole (IRL1104L) 175 C Operating Temperature RDS(on) = 0.008 Fast Switching G Fully Avalanche Rated ID = 104A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processin

 ..2. Size:141K  international rectifier
 irl1104l irl1104s.pdf pdf_icon

IRL1104S

PD -91840 PRELIMINARY IRL1104S/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 40V Surface Mount (IRL1104S) Low-profile through-hole (IRL1104L) 175 C Operating Temperature RDS(on) = 0.008 Fast Switching G Fully Avalanche Rated ID = 104A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processin

 ..3. Size:226K  international rectifier
 irl1104lpbf irl1104spbf.pdf pdf_icon

IRL1104S

PD -95576 IRL1104SPbF IRL1104LPbF l Logic-Level Gate Drive HEXFET Power MOSFET l Advanced Process Technology l Surface Mount (IRL1104S) D VDSS = 40V l Low-profile through-hole (IRL1104L) l 175 C Operating Temperature RDS(on) = 0.008 l Fast Switching G l Fully Avalanche Rated ID = 104A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier util

 7.1. Size:167K  international rectifier
 irl1104pbf.pdf pdf_icon

IRL1104S

PD - 95404 IRL1104PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 40V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.008 l Fast Switching G l Fully Avalanche Rated l Lead-Free ID = 104A S Description Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced

MOSTRAR MÁS

Otros transistores... IRL3502SPBF, IRL1004LPBF, IRL1004PBF, IRL1004SPBF, IRL1104, IRL1104L, IRL1104LPBF, IRL1104PBF, STF13NM60N, IRL1104SPBF, IRL1404LPBF, IRL1404PBF, IRL1404SPBF, IRL1404ZPBF, IRL2203NLPBF, IRL2203NPBF, IRL2203NSPBF