IRL1104S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRL1104S
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 167 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 104 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 68 nC
trⓘ - Время нарастания: 257 ns
Cossⓘ - Выходная емкость: 1065 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
Тип корпуса: TO263
IRL1104S Datasheet (PDF)
irl1104s.pdf
PD -91840PRELIMINARYIRL1104S/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 40V Surface Mount (IRL1104S) Low-profile through-hole (IRL1104L) 175C Operating Temperature RDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 104A SDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processin
irl1104l irl1104s.pdf
PD -91840PRELIMINARYIRL1104S/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 40V Surface Mount (IRL1104S) Low-profile through-hole (IRL1104L) 175C Operating Temperature RDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 104A SDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processin
irl1104lpbf irl1104spbf.pdf
PD -95576IRL1104SPbFIRL1104LPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRL1104S) DVDSS = 40Vl Low-profile through-hole (IRL1104L)l 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier util
irl1104pbf.pdf
PD - 95404IRL1104PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 40Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche Ratedl Lead-Free ID = 104ASDescriptionFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced
irl1104.pdf
PD -91805IRL1104HEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 40V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.008G Fast Switching Fully Avalanche RatedID = 104AUSDescriptionFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F