IRFN9240 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFN9240
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 60(max) nC
   trⓘ - Tiempo de subida: 85(max) nS
   Cossⓘ - Capacitancia de salida: 570 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.51 Ohm
   Paquete / Cubierta: SMD1

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IRFN9240 Datasheet (PDF)

..1. Size:183K international rectifier
irfn9240.pdf

PD - 91554DIRFN9240JANTX2N7237UJANTXV2N7237UREF:MIL-PRF-19500/595POWER MOSFET 200V, P-CHANNELSURFACE MOUNT(SMD-1)HEXFET MOSFET TECHNOLOGYProduct Summary Part Number RDS(on) IDIRFN9240 0.51 -11AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheSMD-1efficient geometry design achieves very low on-s

9.1. Size:21K 1
irfn9130smd.pdf

IRFN9130SMDMECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET FOR HIREL APPLICATIONS VDSS -100VID(cont) -9.3A RDS(on) 0.31FEATURES HERMETICALLY SEALED SIMPLE DRIVE REQUIREMENTS

9.2. Size:21K 1
irfn9130.pdf

IRFN9130MECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET FOR HIREL APPLICATIONS VDSS -100VID(cont) -11A RDS(on) 0.3FEATURES HERMETICALLY SEALED SIMPLE DRIVE

9.3. Size:23K 1
irfn9140smd.pdf

IRFN9140SMDMECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET VDSS 100V ID(cont) 14A RDS(on) 0.020FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS

9.4. Size:171K international rectifier
irfn9140.pdf

PD - 91553DIRFN9140JANTX2N7236UJANTXV2N7236UREF:MIL-PRF-19500/595POWER MOSFET 100V, P-CHANNELSURFACE MOUNT(SMD-1)HEXFET MOSFET TECHNOLOGYProduct Summary Part Number RDS(on) IDIRFN9140 0.20 -18AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheSMD-1efficient geometry design achieves very low on-s

9.5. Size:21K semelab
irfn9130smd05.pdf

IRF9130SMD05NIRFN9130SMD05MECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET FOR HIREL APPLICATIONS VDSS -100VID(cont) -8A RDS(on) 0.35FEATURES HERMETICALLY SEALED

9.6. Size:21K semelab
irfn9530.pdf

IRFN9530MECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET FOR HIREL APPLICATIONS VDSS -100VID(cont) -12A RDS(on) 0.3FEATURES HERMETICALLY SEALED SIMPLE DRIVE

Otros transistores... IRFN340 , IRFN350 , IRFN440 , IRFN450 , IRFN9130 , IRFN9130SMD , IRFN9140 , IRFN9140SMD , IRFB31N20D , IRFP044 , IRFP044N , IRFP048 , IRFP048N , IRFP054 , IRFP054N , IRFP064 , IRFP064N .

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