IRL2703PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRL2703PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 24 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 1 V

trⓘ - Tiempo de subida: 140 nS

Cossⓘ - Capacitancia de salida: 210 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: TO220AB

 Búsqueda de reemplazo de IRL2703PBF MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRL2703PBF datasheet

 ..1. Size:217K  international rectifier
 irl2703pbf.pdf pdf_icon

IRL2703PBF

PD - 95368 IRL2703PbF Lead-Free www.irf.com 1 6/17/04 IRL2703PbF 2 www.irf.com IRL2703PbF www.irf.com 3 IRL2703PbF 4 www.irf.com IRL2703PbF www.irf.com 5 IRL2703PbF 6 www.irf.com IRL2703PbF www.irf.com 7 IRL2703PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.13

 7.1. Size:1187K  international rectifier
 irl2703spbf.pdf pdf_icon

IRL2703PBF

PD- 95586 IRL2703SPbF Lead-Free www.irf.com 1 07/20/04 IRL2703SPbF 2 www.irf.com IRL2703SPbF www.irf.com 3 IRL2703SPbF 4 www.irf.com IRL2703SPbF www.irf.com 5 IRL2703SPbF 6 www.irf.com IRL2703SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - +

 7.2. Size:134K  international rectifier
 irl2703s.pdf pdf_icon

IRL2703PBF

PD - 9.1360 IRL2703S PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 30V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.04 Fast Switching G Fully Avalanche Rated ID = 24A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible

 7.3. Size:108K  international rectifier
 irl2703.pdf pdf_icon

IRL2703PBF

PD - 9.1359A IRL2703 HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 30V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.04 Fast Switching G Fully Avalanche Rated ID = 24A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistanc

MOSTRAR MÁS

Otros transistores... IRL1404PBF, IRL1404SPBF, IRL1404ZPBF, IRL2203NLPBF, IRL2203NPBF, IRL2203NSPBF, IRL2505PBF, IRL2505SPBF, IRFZ48N, IRL2703SPBF, IRL2910PBF, IRL2910SPBF, IRL3102PBF, IRL3102SPBF, IRL3103D2PBF, IRL3103LPBF, IRL3103PBF