All MOSFET. IRL2703PBF Datasheet

 

IRL2703PBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRL2703PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 45 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 16 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
   Maximum Drain Current |Id|: 24 A
   Maximum Junction Temperature (Tj): 175 °C
   Rise Time (tr): 140 nS
   Drain-Source Capacitance (Cd): 210 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm
   Package: TO220AB

 IRL2703PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRL2703PBF Datasheet (PDF)

 ..1. Size:217K  international rectifier
 irl2703pbf.pdf

IRL2703PBF IRL2703PBF

PD - 95368IRL2703PbF Lead-Freewww.irf.com 16/17/04IRL2703PbF2 www.irf.comIRL2703PbFwww.irf.com 3IRL2703PbF4 www.irf.comIRL2703PbFwww.irf.com 5IRL2703PbF6 www.irf.comIRL2703PbFwww.irf.com 7IRL2703PbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13

 ..2. Size:217K  infineon
 irl2703pbf.pdf

IRL2703PBF IRL2703PBF

PD - 95368IRL2703PbF Lead-Freewww.irf.com 16/17/04IRL2703PbF2 www.irf.comIRL2703PbFwww.irf.com 3IRL2703PbF4 www.irf.comIRL2703PbFwww.irf.com 5IRL2703PbF6 www.irf.comIRL2703PbFwww.irf.com 7IRL2703PbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13

 7.1. Size:1187K  international rectifier
 irl2703spbf.pdf

IRL2703PBF IRL2703PBF

PD- 95586IRL2703SPbF Lead-Freewww.irf.com 107/20/04IRL2703SPbF2 www.irf.comIRL2703SPbFwww.irf.com 3IRL2703SPbF4 www.irf.comIRL2703SPbFwww.irf.com 5IRL2703SPbF6 www.irf.comIRL2703SPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCurrent Transformer-+

 7.2. Size:134K  international rectifier
 irl2703s.pdf

IRL2703PBF IRL2703PBF

PD - 9.1360IRL2703SPRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 30V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.04 Fast SwitchingG Fully Avalanche RatedID = 24ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible

 7.3. Size:108K  international rectifier
 irl2703.pdf

IRL2703PBF IRL2703PBF

PD - 9.1359AIRL2703HEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 30V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.04 Fast SwitchingG Fully Avalanche RatedID = 24ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistanc

 7.4. Size:251K  inchange semiconductor
 irl2703.pdf

IRL2703PBF IRL2703PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL2703 IIRL2703FEATURESStatic drain-source on-resistance:RDS(on) 0.04Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PSMN1R7-60BS | IRFP3206

 

 
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