IRL3302SPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRL3302SPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 57 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 39 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 0.7 V

trⓘ - Tiempo de subida: 110 nS

Cossⓘ - Capacitancia de salida: 520 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: TO263

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IRL3302SPBF datasheet

 ..1. Size:323K  international rectifier
 irl3302spbf.pdf pdf_icon

IRL3302SPBF

PD- 95587 IRL3302SPbF HEXFET Power MOSFET D VDSS = 20V RDS(on) = 0.020 G Lead-Free S ID = 39A www.irf.com 1 07/20/04 IRL3302SPbF 2 www.irf.com IRL3302SPbF www.irf.com 3 IRL3302SPbF 4 www.irf.com IRL3302SPbF www.irf.com 5 IRL3302SPbF 6 www.irf.com IRL3302SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Induct

 6.1. Size:129K  international rectifier
 irl3302s.pdf pdf_icon

IRL3302SPBF

PD - 9.1692A IRL3302S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Surface Mount VDSS = 20V Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters RDS(on) = 0.020W Fast Switching G ID = 39A S Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques

 7.1. Size:88K  international rectifier
 irl3302.pdf pdf_icon

IRL3302SPBF

PD 9.1696A IRL3302 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Optimized for 4.5V Gate Drive VDSS = 20V Ideal for CPU Core DC-DC Converters 150 C Operating Temperature RDS(on) = 0.020W Fast Switching G Description ID = 39A These HEXFET Power MOSFETs were designed S specifically to meet the demands of CPU core DC-DC converters in the PC environment. Adv

 8.1. Size:292K  international rectifier
 irl3303lpbf irl3303spbf.pdf pdf_icon

IRL3302SPBF

PD - 95578 IRL3303LPbF IRL3303SPbF l Logic-Level Gate Drive HEXFET Power MOSFET l Advanced Process Technology D l Surface Mount (IRL3303S) VDSS = 30V l Low-profile through-hole (IRL3303L) l 175 C Operating Temperature RDS(on) = 0.026 l Fast Switching G l Fully Avalanche Rated ID = 38A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utili

MOSTRAR MÁS

Otros transistores... IRL2910SPBF, IRL3102PBF, IRL3102SPBF, IRL3103D2PBF, IRL3103LPBF, IRL3103PBF, IRL3103SPBF, IRL3202PBF, AOD4184A, IRL3303LPBF, IRL3303PBF, IRL3303SPBF, IRHY57034CM, IRHY57130CM, IRHY57133CMSE, IRHY57230CMSE, IRHY57234CMSE