IRL3303LPBF Todos los transistores

 

IRL3303LPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRL3303LPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 68 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 38 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 200 nS
   Cossⓘ - Capacitancia de salida: 340 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
   Paquete / Cubierta: TO262
 

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IRL3303LPBF Datasheet (PDF)

 ..1. Size:292K  international rectifier
 irl3303lpbf irl3303spbf.pdf pdf_icon

IRL3303LPBF

PD - 95578IRL3303LPbFIRL3303SPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process TechnologyDl Surface Mount (IRL3303S)VDSS = 30Vl Low-profile through-hole (IRL3303L)l 175C Operating TemperatureRDS(on) = 0.026l Fast SwitchingGl Fully Avalanche RatedID = 38Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutili

 6.1. Size:158K  international rectifier
 irl3303s irl3303l.pdf pdf_icon

IRL3303LPBF

PD - 9.1323BIRL3303S/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 30V Surface Mount (IRL3303S) Low-profile through-hole (IRL3303L) 175C Operating Temperature RDS(on) = 0.026 Fast SwitchingG Fully Avalanche RatedID = 38ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques

 7.1. Size:103K  international rectifier
 irl3303.pdf pdf_icon

IRL3303LPBF

PD - 9.1322BIRL3303HEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 30V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.026 Fast SwitchingG Fully Avalanche RatedID = 38ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistan

 7.2. Size:1331K  international rectifier
 irl3303pbf.pdf pdf_icon

IRL3303LPBF

PD - 94887IRL3303PbFHEXFET Power MOSFET Lead-Freewww.irf.com 112/11/03IRL3303PbF2 www.irf.comIRL3303PbFwww.irf.com 3IRL3303PbF4 www.irf.comIRL3303PbFwww.irf.com 5IRL3303PbF6 www.irf.comIRL3303PbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout ConsiderationsD.U.T Low Stray Inductance Ground Plane Low Leakage Inductance

MOSTRAR MÁS

Otros transistores... IRL3102PBF , IRL3102SPBF , IRL3103D2PBF , IRL3103LPBF , IRL3103PBF , IRL3103SPBF , IRL3202PBF , IRL3302SPBF , AO3407 , IRL3303PBF , IRL3303SPBF , IRHY57034CM , IRHY57130CM , IRHY57133CMSE , IRHY57230CMSE , IRHY57234CMSE , IRHY57Z30CM .

History: IRLMS2002TR | WT3139K

 

 
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