IRHY597230CM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRHY597230CM
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 55 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.515 Ohm
   Paquete / Cubierta: TO257AA

Búsqueda de reemplazo de MOSFET IRHY597230CM

IRHY597230CM Datasheet (PDF)

..1. Size:533K international rectifier
irhy597130cm irhy597230cm.pdf

The documentation and process conversion measures INCH-POUND necessary to comply with this revision shall be completed by 18 September 2014 MIL-PRF-19500/712E 18 July 2014 SUPERSEDING MIL-PRF-19500/712D 8 April 2014 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7545U3, 2N7546U3, 2N7547T3,

..2. Size:107K international rectifier
irhy597230cm.pdf

PD - 94319ARADIATION HARDENED IRHY597230CMPOWER MOSFET200V, P-CHANNELTHRU-HOLE (TO-257AA) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHY597230CM 100K Rads (Si) 0.515 -8.0A IRHY593230CM 300K Rads (Si) 0.515 -8.0AT0-257AAInternational Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli-cations. The

7.1. Size:107K international rectifier
irhy597130cm.pdf

PD - 94343RADIATION HARDENED IRHY597130CMPOWER MOSFET100V, P-CHANNELTHRU-HOLE (TO-257AA) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHY597130CM 100K Rads (Si) 0.215 -12.5A IRHY593130CM 300K Rads (Si) 0.215 -12.5AT0-257AAInternational Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli-cations. Th

7.2. Size:204K international rectifier
irhy597034cm.pdf

PD - 94663ARADIATION HARDENED IRHY597034CMPOWER MOSFET60V, P-CHANNELTHRU-HOLE (TO-257AA) TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHY597034CM 100K Rads (Si) 0.095 -18A* IRHY593034CM 300K Rads (Si) 0.095 -18A*T0-257AAInternational Rectifiers R5TM technology provideshigh performance power MOSFETs for spaceFeatures:applica

9.1. Size:174K international rectifier
irhy57234cmse.pdf

PD-93823CRADIATION HARDENED IRHY57234CMSEPOWER MOSFET 250V, N-CHANNELTHRU-HOLE (TO-257AA) TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHY57234CMSE 100K Rads (Si) 0.41 9.6ATO-257AAInternational Rectifiers R5TM technology provideshigh performance power MOSFETs for spaceapplications. These devices have been characterizedFeatures:f

9.2. Size:118K international rectifier
irhy57230cm.pdf

PD - 93827ARADIATION HARDENED IRHY57230CMPOWER MOSFET200V, N-CHANNELTHRU-HOLE (TO-257AA) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHY57230CM 100K Rads (Si) 0.21 12.5A IRHY53230CM 300K Rads (Si) 0.21 12.5A IRHY54230CM 600K Rads (Si) 0.21 12.5A IRHY58230CM 1000K Rads (Si) 0.26 12.5ATO-257AAInternational Rectifiers R5TM

9.3. Size:175K international rectifier
irhy57133cmse.pdf

PD - 94318CIRHY57133CMSERADIATION HARDENED JANSR2N7488T3POWER MOSFET 130V, N-CHANNELTHRU-HOLE (TO-257AA) REF: MIL-PRF-19500/70555 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHY57133CMSE 100K Rads (Si) 0.09 18A* JANSR2N7488T3T0-257AAInternational Rectifiers R5TM technology provideshigh performance power MOSFETs for sp

9.4. Size:224K international rectifier
irhy57034cm irhy57130cm irhy57z30cm.pdf

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/702D shall be completed by 26 May 2014. 26 February 2014 SUPERSEDING MIL-PRF-19500/702C 21 May 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED * TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7482T3, 2N7483T3, AND 2N7484

9.5. Size:119K international rectifier
irhy57034cm.pdf

PD - 93825ARADIATION HARDENED IRHY57034CMPOWER MOSFET60V, N-CHANNELTHRU-HOLE (TO-257AA) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHY57034CM 100K Rads (Si) 0.04 18A* IRHY53034CM 300K Rads (Si) 0.04 18A* IRHY54034CM 600K Rads (Si) 0.04 18A* IRHY58034CM 1000K Rads (Si) 0.048 18A*TO-257AAInternational Rectifiers R5TM tech

9.6. Size:115K international rectifier
irhy57130cm.pdf

PD - 93826ARADIATION HARDENED IRHY57130CMPOWER MOSFET100V, N-CHANNELTHRU-HOLE (TO-257AA) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHY57130CM 100K Rads (Si) 0.07 18A* IRHY53130CM 300K Rads (Si) 0.07 18A* IRHY54130CM 600K Rads (Si) 0.07 18A* IRHY58130CM 1000K Rads (Si) 0.085 18A*TO-257AAInternational Rectifiers R5TM tec

9.7. Size:174K international rectifier
irhy57230cmse.pdf

PD - 93822BIRHY57230CMSERADIATION HARDENED JANSR2N7489T3POWER MOSFET 200V, N-CHANNELTHRU-HOLE (TO-257AA) REF:MIL-PRF-19500/705TECHNOLOGY55 Product SummaryPart Number Radiation Level RDS(on) ID QPL Part Number IRHY57230CMSE 100K Rads (Si) 0.23 12A JANSR2N7489T3TO-257AAInternational Rectifiers R5TM technology provideshigh performance power MOSFETs for spac

9.8. Size:112K international rectifier
irhy57z30cm.pdf

PD - 93824ARADIATION HARDENED IRHY57Z30CMPOWER MOSFET30V, N-CHANNELTHRU-HOLE (TO-257AA) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHY57Z30CM 100K Rads (Si) 0.03 18A* IRHY53Z30CM 300K Rads (Si) 0.03 18A* IRHY54Z30CM 600K Rads (Si) 0.03 18A* IRHY58Z30CM 1000K Rads (Si) 0.035 18A*TO-257AAInternational Rectifiers R5TM tech

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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Recientemente añadidas las descripciónes de los transistores: