IRHY597230CM MOSFET. Datasheet pdf. Equivalent
Type Designator: IRHY597230CM
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 55 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.515 Ohm
Package: TO257AA
IRHY597230CM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRHY597230CM Datasheet (PDF)
irhy597130cm irhy597230cm.pdf
The documentation and process conversion measures INCH-POUND necessary to comply with this revision shall be completed by 18 September 2014 MIL-PRF-19500/712E 18 July 2014 SUPERSEDING MIL-PRF-19500/712D 8 April 2014 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7545U3, 2N7546U3, 2N7547T3,
irhy597230cm.pdf
PD - 94319ARADIATION HARDENED IRHY597230CMPOWER MOSFET200V, P-CHANNELTHRU-HOLE (TO-257AA) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHY597230CM 100K Rads (Si) 0.515 -8.0A IRHY593230CM 300K Rads (Si) 0.515 -8.0AT0-257AAInternational Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli-cations. The
irhy597130cm.pdf
PD - 94343RADIATION HARDENED IRHY597130CMPOWER MOSFET100V, P-CHANNELTHRU-HOLE (TO-257AA) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHY597130CM 100K Rads (Si) 0.215 -12.5A IRHY593130CM 300K Rads (Si) 0.215 -12.5AT0-257AAInternational Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli-cations. Th
irhy597034cm.pdf
PD - 94663ARADIATION HARDENED IRHY597034CMPOWER MOSFET60V, P-CHANNELTHRU-HOLE (TO-257AA) TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHY597034CM 100K Rads (Si) 0.095 -18A* IRHY593034CM 300K Rads (Si) 0.095 -18A*T0-257AAInternational Rectifiers R5TM technology provideshigh performance power MOSFETs for spaceFeatures:applica
irhy57234cmse.pdf
PD-93823CRADIATION HARDENED IRHY57234CMSEPOWER MOSFET 250V, N-CHANNELTHRU-HOLE (TO-257AA) TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHY57234CMSE 100K Rads (Si) 0.41 9.6ATO-257AAInternational Rectifiers R5TM technology provideshigh performance power MOSFETs for spaceapplications. These devices have been characterizedFeatures:f
irhy57230cm.pdf
PD - 93827ARADIATION HARDENED IRHY57230CMPOWER MOSFET200V, N-CHANNELTHRU-HOLE (TO-257AA) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHY57230CM 100K Rads (Si) 0.21 12.5A IRHY53230CM 300K Rads (Si) 0.21 12.5A IRHY54230CM 600K Rads (Si) 0.21 12.5A IRHY58230CM 1000K Rads (Si) 0.26 12.5ATO-257AAInternational Rectifiers R5TM
irhy57133cmse.pdf
PD - 94318CIRHY57133CMSERADIATION HARDENED JANSR2N7488T3POWER MOSFET 130V, N-CHANNELTHRU-HOLE (TO-257AA) REF: MIL-PRF-19500/70555 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHY57133CMSE 100K Rads (Si) 0.09 18A* JANSR2N7488T3T0-257AAInternational Rectifiers R5TM technology provideshigh performance power MOSFETs for sp
irhy57034cm irhy57130cm irhy57z30cm.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/702D shall be completed by 26 May 2014. 26 February 2014 SUPERSEDING MIL-PRF-19500/702C 21 May 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED * TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7482T3, 2N7483T3, AND 2N7484
irhy57034cm.pdf
PD - 93825ARADIATION HARDENED IRHY57034CMPOWER MOSFET60V, N-CHANNELTHRU-HOLE (TO-257AA) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHY57034CM 100K Rads (Si) 0.04 18A* IRHY53034CM 300K Rads (Si) 0.04 18A* IRHY54034CM 600K Rads (Si) 0.04 18A* IRHY58034CM 1000K Rads (Si) 0.048 18A*TO-257AAInternational Rectifiers R5TM tech
irhy57130cm.pdf
PD - 93826ARADIATION HARDENED IRHY57130CMPOWER MOSFET100V, N-CHANNELTHRU-HOLE (TO-257AA) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHY57130CM 100K Rads (Si) 0.07 18A* IRHY53130CM 300K Rads (Si) 0.07 18A* IRHY54130CM 600K Rads (Si) 0.07 18A* IRHY58130CM 1000K Rads (Si) 0.085 18A*TO-257AAInternational Rectifiers R5TM tec
irhy57230cmse.pdf
PD - 93822BIRHY57230CMSERADIATION HARDENED JANSR2N7489T3POWER MOSFET 200V, N-CHANNELTHRU-HOLE (TO-257AA) REF:MIL-PRF-19500/705TECHNOLOGY55 Product SummaryPart Number Radiation Level RDS(on) ID QPL Part Number IRHY57230CMSE 100K Rads (Si) 0.23 12A JANSR2N7489T3TO-257AAInternational Rectifiers R5TM technology provideshigh performance power MOSFETs for spac
irhy57z30cm.pdf
PD - 93824ARADIATION HARDENED IRHY57Z30CMPOWER MOSFET30V, N-CHANNELTHRU-HOLE (TO-257AA) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHY57Z30CM 100K Rads (Si) 0.03 18A* IRHY53Z30CM 300K Rads (Si) 0.03 18A* IRHY54Z30CM 600K Rads (Si) 0.03 18A* IRHY58Z30CM 1000K Rads (Si) 0.035 18A*TO-257AAInternational Rectifiers R5TM tech
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
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