IRHYS597034CM Todos los transistores

 

IRHYS597034CM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRHYS597034CM

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 75 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Resistencia drenaje-fuente RDS(on): 0.09 Ohm

Empaquetado / Estuche: TO257AA

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IRHYS597034CM Datasheet (PDF)

1.1. irhys597034cm irhys597z30cm.pdf Size:279K _international_rectifier

IRHYS597034CM
IRHYS597034CM

The documentation and process conversion INCH-POUND measures necessary to comply with this revision shall be completed by 24 November 2014. MIL-PRF-19500/732D 8 October 2014 SUPERSEDING MIL-PRF-19500/732C 18 April 2014 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, FIELD EFFECT RADIATION HARDENED, P-CHANNEL, SILICON, THROUGH-HOLE AND SURFACE MOUNT, TYPES 2N7519 AND 2

5.1. irhys67230cm.pdf Size:200K _international_rectifier

IRHYS597034CM
IRHYS597034CM

PD-96925C 2N7592T3 RADIATION HARDENED IRHYS67230CM POWER MOSFET 200V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHYS67230CM 100K Rads (Si) 0.13Ω 16A IRHYS63230CM 300K Rads (Si) 0.13Ω 16A Low-Ohmic International Rectifier’s R6TM technology provides TO-257AA superior power MOSFETs for space applications. Featur

5.2. irhys67130cm.pdf Size:194K _international_rectifier

IRHYS597034CM
IRHYS597034CM

PD-96986A 2N7588T3 RADIATION HARDENED IRHYS67130CM POWER MOSFET 100V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHYS67130CM 100K Rads (Si) 0.042Ω 20A* IRHYS63130CM 300K Rads (Si) 0.042Ω 20A* Low-Ohmic International Rectifier’s R6TM technology provides TO-257AA superior power MOSFETs for space applications. Fe

 5.3. irhys67234cm.pdf Size:202K _international_rectifier

IRHYS597034CM
IRHYS597034CM

PD-97193A 2N7594T3 RADIATION HARDENED IRHYS67234CM POWER MOSFET 250V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHYS67234CM 100K Rads (Si) 0.22Ω 12A IRHYS63234CM 300K Rads (Si) 0.22Ω 12A Low-Ohmic International Rectifier’s R6TM technology provides TO-257AA superior power MOSFETs for space applications. Featur

5.4. irhys67134cm.pdf Size:190K _international_rectifier

IRHYS597034CM
IRHYS597034CM

PD-96930C 2N7590T3 RADIATION HARDENED IRHYS67134CM POWER MOSFET 150V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHYS67134CM 100K Rads (Si) 0.090Ω 19A IRHYS63134CM 300K Rads (Si) 0.090Ω 19A Low-Ohmic TO-257AA International Rectifier’s R6TM technology provides Features: superior power MOSFETs for space applica

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