All MOSFET. IRHYS597034CM Datasheet

 

IRHYS597034CM MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRHYS597034CM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO257AA

 IRHYS597034CM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRHYS597034CM Datasheet (PDF)

 ..1. Size:279K  international rectifier
 irhys597034cm irhys597z30cm.pdf

IRHYS597034CM IRHYS597034CM

The documentation and process conversion INCH-POUND measures necessary to comply with this revision shall be completed by 24 November 2014. MIL-PRF-19500/732D 8 October 2014 SUPERSEDING MIL-PRF-19500/732C 18 April 2014 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, FIELD EFFECT RADIATION HARDENED, P-CHANNEL, SILICON, THROUGH-HOLE AND SURFACE MOUNT, TYPES 2N7519 AND 2

 9.1. Size:190K  international rectifier
 irhys67134cm.pdf

IRHYS597034CM IRHYS597034CM

PD-96930C2N7590T3RADIATION HARDENED IRHYS67134CMPOWER MOSFET 150V, N-CHANNELTHRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHYS67134CM 100K Rads (Si) 0.090 19A IRHYS63134CM 300K Rads (Si) 0.090 19ALow-OhmicTO-257AAInternational Rectifiers R6TM technology providesFeatures:superior power MOSFETs for space applica

 9.2. Size:200K  international rectifier
 irhys67230cm.pdf

IRHYS597034CM IRHYS597034CM

PD-96925C2N7592T3RADIATION HARDENED IRHYS67230CMPOWER MOSFET 200V, N-CHANNELTHRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHYS67230CM 100K Rads (Si) 0.13 16A IRHYS63230CM 300K Rads (Si) 0.13 16ALow-OhmicInternational Rectifiers R6TM technology provides TO-257AAsuperior power MOSFETs for space applications.Featur

 9.3. Size:194K  international rectifier
 irhys67130cm.pdf

IRHYS597034CM IRHYS597034CM

PD-96986A2N7588T3RADIATION HARDENED IRHYS67130CMPOWER MOSFET 100V, N-CHANNELTHRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHYS67130CM 100K Rads (Si) 0.042 20A* IRHYS63130CM 300K Rads (Si) 0.042 20A*Low-OhmicInternational Rectifiers R6TM technology provides TO-257AAsuperior power MOSFETs for space applications.Fe

 9.4. Size:202K  international rectifier
 irhys67234cm.pdf

IRHYS597034CM IRHYS597034CM

PD-97193A2N7594T3RADIATION HARDENED IRHYS67234CMPOWER MOSFET 250V, N-CHANNELTHRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHYS67234CM 100K Rads (Si) 0.22 12A IRHYS63234CM 300K Rads (Si) 0.22 12ALow-OhmicInternational Rectifiers R6TM technology provides TO-257AAsuperior power MOSFETs for space applications.Featur

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: FQPF20N06L

 

 
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