IRHYS597Z30CM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRHYS597Z30CM

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm

Encapsulados: TO257AA

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IRHYS597Z30CM datasheet

 ..1. Size:279K  international rectifier
 irhys597034cm irhys597z30cm.pdf pdf_icon

IRHYS597Z30CM

The documentation and process conversion INCH-POUND measures necessary to comply with this revision shall be completed by 24 November 2014. MIL-PRF-19500/732D 8 October 2014 SUPERSEDING MIL-PRF-19500/732C 18 April 2014 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, FIELD EFFECT RADIATION HARDENED, P-CHANNEL, SILICON, THROUGH-HOLE AND SURFACE MOUNT, TYPES 2N7519 AND 2

 9.1. Size:190K  international rectifier
 irhys67134cm.pdf pdf_icon

IRHYS597Z30CM

PD-96930C 2N7590T3 RADIATION HARDENED IRHYS67134CM POWER MOSFET 150V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHYS67134CM 100K Rads (Si) 0.090 19A IRHYS63134CM 300K Rads (Si) 0.090 19A Low-Ohmic TO-257AA International Rectifier s R6TM technology provides Features superior power MOSFETs for space applica

 9.2. Size:200K  international rectifier
 irhys67230cm.pdf pdf_icon

IRHYS597Z30CM

PD-96925C 2N7592T3 RADIATION HARDENED IRHYS67230CM POWER MOSFET 200V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHYS67230CM 100K Rads (Si) 0.13 16A IRHYS63230CM 300K Rads (Si) 0.13 16A Low-Ohmic International Rectifier s R6TM technology provides TO-257AA superior power MOSFETs for space applications. Featur

 9.3. Size:194K  international rectifier
 irhys67130cm.pdf pdf_icon

IRHYS597Z30CM

PD-96986A 2N7588T3 RADIATION HARDENED IRHYS67130CM POWER MOSFET 100V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHYS67130CM 100K Rads (Si) 0.042 20A* IRHYS63130CM 300K Rads (Si) 0.042 20A* Low-Ohmic International Rectifier s R6TM technology provides TO-257AA superior power MOSFETs for space applications. Fe

MOSTRAR MÁS

Otros transistores... IRHY9230CM, IRHYB597034CM, IRHYB597Z30CM, IRHYB67130CM, IRHYB67134CM, IRHYB67230CM, IRHYK57133CMSE, IRHYS597034CM, AON6414A, IRHYS67130CM, IRHYS67134CM, IRHYS67230CM, IRHYS67234CM, IRHN57250SE, IRHN7054, IRHN7130, IRHN7150