IRHYS597Z30CM Specs and Replacement

Type Designator: IRHYS597Z30CM

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: TO257AA

IRHYS597Z30CM substitution

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IRHYS597Z30CM datasheet

 ..1. Size:279K  international rectifier
 irhys597034cm irhys597z30cm.pdf pdf_icon

IRHYS597Z30CM

The documentation and process conversion INCH-POUND measures necessary to comply with this revision shall be completed by 24 November 2014. MIL-PRF-19500/732D 8 October 2014 SUPERSEDING MIL-PRF-19500/732C 18 April 2014 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, FIELD EFFECT RADIATION HARDENED, P-CHANNEL, SILICON, THROUGH-HOLE AND SURFACE MOUNT, TYPES 2N7519 AND 2... See More ⇒

 9.1. Size:190K  international rectifier
 irhys67134cm.pdf pdf_icon

IRHYS597Z30CM

PD-96930C 2N7590T3 RADIATION HARDENED IRHYS67134CM POWER MOSFET 150V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHYS67134CM 100K Rads (Si) 0.090 19A IRHYS63134CM 300K Rads (Si) 0.090 19A Low-Ohmic TO-257AA International Rectifier s R6TM technology provides Features superior power MOSFETs for space applica... See More ⇒

 9.2. Size:200K  international rectifier
 irhys67230cm.pdf pdf_icon

IRHYS597Z30CM

PD-96925C 2N7592T3 RADIATION HARDENED IRHYS67230CM POWER MOSFET 200V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHYS67230CM 100K Rads (Si) 0.13 16A IRHYS63230CM 300K Rads (Si) 0.13 16A Low-Ohmic International Rectifier s R6TM technology provides TO-257AA superior power MOSFETs for space applications. Featur... See More ⇒

 9.3. Size:194K  international rectifier
 irhys67130cm.pdf pdf_icon

IRHYS597Z30CM

PD-96986A 2N7588T3 RADIATION HARDENED IRHYS67130CM POWER MOSFET 100V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHYS67130CM 100K Rads (Si) 0.042 20A* IRHYS63130CM 300K Rads (Si) 0.042 20A* Low-Ohmic International Rectifier s R6TM technology provides TO-257AA superior power MOSFETs for space applications. Fe... See More ⇒

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Detailed specifications: IRHY9230CM, IRHYB597034CM, IRHYB597Z30CM, IRHYB67130CM, IRHYB67134CM, IRHYB67230CM, IRHYK57133CMSE, IRHYS597034CM, AON6414A, IRHYS67130CM, IRHYS67134CM, IRHYS67230CM, IRHYS67234CM, IRHN57250SE, IRHN7054, IRHN7130, IRHN7150

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.