IRFP054 Datasheet. Equivalente

 ..1. Size:874K  international rectifier
 irfp054.pdf

PD - 95000 IRFP054PbF Lead-Free 02/11/04 Document Number 91200 www.vishay.com 1 IRFP054PbF Document Number 91200 www.vishay.com 2 IRFP054PbF Document Number 91200 www.vishay.com 3 IRFP054PbF Document Number 91200 www.vishay.com 4 IRFP054PbF Document Number 91200 www.vishay.com 5 IRFP054PbF Document Number 91200 www.vishay.com 6 IRFP054PbF TO-247AC Package O

 ..2. Size:1562K  vishay
 irfp054pbf sihfp054.pdf

IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Isolated Central Mounting Hole RDS(on) ( )VGS = 10 V 0.014 RoHS* 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 160 Fast Switching Qgs (nC) 48 Ease of Paralleling Qgd (nC) 54 Simple Drive Requirements Configuration Single Com

 ..3. Size:212K  inchange semiconductor
 irfp054pbf.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP054PBF FEATURES With TO-247 packaging Uninterruptible power supply High speed switching Simple drive requirements 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

 0.1. Size:216K  international rectifier
 irfp054v.pdf

PD - 94110 IRFP054V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 9.0m G Fast Switching Fully Avalanche Rated ID = 93A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to

 0.2. Size:109K  international rectifier
 irfp054n.pdf

PD - 9.1382A IRFP054N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 0.012 Fully Avalanche Rated G ID = 81A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This ben

 0.3. Size:1494K  international rectifier
 irfp054npbf.pdf

PD- 95423 IRFP054NPbF Lead-Free www.irf.com 1 06/16/04 IRFP054NPbF 2 www.irf.com IRFP054NPbF www.irf.com 3 IRFP054NPbF 4 www.irf.com IRFP054NPbF www.irf.com 5 IRFP054NPbF 6 www.irf.com IRFP054NPbF www.irf.com 7 IRFP054NPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE T HIS IS AN IRFPE30 WITH AS

 0.4. Size:241K  inchange semiconductor
 irfp054n.pdf

isc N-Channel MOSFET Transistor IRFP054N IIRFP054N FEATURES Static drain-source on-resistance RDS(on) 12m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sourc