IRFP054 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFP054
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 230 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 70 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 160(max) nC
trⓘ - Время нарастания: 160 ns
Cossⓘ - Выходная емкость: 2000 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm
Тип корпуса: TO247AC
IRFP054 Datasheet (PDF)
irfp054.pdf
PD - 95000IRFP054PbF Lead-Free02/11/04Document Number: 91200 www.vishay.com1IRFP054PbFDocument Number: 91200 www.vishay.com2IRFP054PbFDocument Number: 91200 www.vishay.com3IRFP054PbFDocument Number: 91200 www.vishay.com4IRFP054PbFDocument Number: 91200 www.vishay.com5IRFP054PbFDocument Number: 91200 www.vishay.com6IRFP054PbFTO-247AC Package O
irfp054pbf sihfp054.pdf
IRFP054, SiHFP054Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Isolated Central Mounting HoleRDS(on) ()VGS = 10 V 0.014RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 160 Fast SwitchingQgs (nC) 48 Ease of ParallelingQgd (nC) 54 Simple Drive RequirementsConfiguration Single Com
irfp054pbf.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP054PBFFEATURESWith TO-247 packagingUninterruptible power supplyHigh speed switchingSimple drive requirements100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
irfp054v.pdf
PD - 94110IRFP054VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 9.0mG Fast Switching Fully Avalanche RatedID = 93A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to
irfp054n.pdf
PD - 9.1382AIRFP054NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.012 Fully Avalanche RatedGID = 81A SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This ben
irfp054npbf.pdf
PD- 95423IRFP054NPbF Lead-Freewww.irf.com 106/16/04IRFP054NPbF2 www.irf.comIRFP054NPbFwww.irf.com 3IRFP054NPbF4 www.irf.comIRFP054NPbFwww.irf.com 5IRFP054NPbF6 www.irf.comIRFP054NPbFwww.irf.com 7IRFP054NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)TO-247AC Part Marking InformationEXAMPLE: T HIS IS AN IRFPE30 WITH AS
irfp054npbf.pdf
PD- 95423IRFP054NPbF Lead-Freewww.irf.com 106/16/04IRFP054NPbF2 www.irf.comIRFP054NPbFwww.irf.com 3IRFP054NPbF4 www.irf.comIRFP054NPbFwww.irf.com 5IRFP054NPbF6 www.irf.comIRFP054NPbFwww.irf.com 7IRFP054NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)TO-247AC Part Marking InformationEXAMPLE: T HIS IS AN IRFPE30 WITH AS
irfp054n.pdf
isc N-Channel MOSFET Transistor IRFP054NIIRFP054NFEATURESStatic drain-source on-resistance:RDS(on)12mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sourc
Другие MOSFET... IRFN9130SMD , IRFN9140 , IRFN9140SMD , IRFN9240 , IRFP044 , IRFP044N , IRFP048 , IRFP048N , IRF9640 , IRFP054N , IRFP064 , IRFP064N , IRFP130 , IRFP131 , IRFP132 , IRFP133 , IRFP140 .
History: 2SJ210
History: 2SJ210
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918