IRHN7450 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRHN7450

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm

Encapsulados: TO276AB

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IRHN7450 datasheet

 ..1. Size:1035K  international rectifier
irhm7054 irhm7150 irhm7250 irhm7450 irhn7054 irhn7150 irhn7250 irhn7450.pdf pdf_icon

IRHN7450

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/603J shall be completed by 20 June 2013. 6 May 2013 SUPERSEDING MIL-PRF-19500/603H 1 July 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7268, 2N7269,

 ..2. Size:310K  international rectifier
irhn7450.pdf pdf_icon

IRHN7450

PD - 90819A IRHN7450 IRHN8450 REPETITIVE AVALANCHE AND dv/dt RATED JANSR2N7270U HEXFET TRANSISTOR JANSH2N7270U N CHANNEL MEGA RAD HARD 500Volt, 0.45 , MEGA RAD HARD HEXFET Product Summary International Rectifier s RAD HARD technology Part Number BVDSS RDS(on) ID HEXFETs demonstrate excellent threshold voltage IRHN7450 500V 0.45 11A stability and breakdown

 0.1. Size:246K  international rectifier
irhn7450se.pdf pdf_icon

IRHN7450

PD - 91313C RADIATION HARDENED IRHN7450SE RADIATION HARDENED IRHN7450SE RADIATION HARDENED IRHN7450SE RADIATION HARDENED IRHN7450SE RADIATION HARDENED IRHN7450SE POWER MOSFET 500V, N-CHANNEL POWER MOSFET 500V, N-CHANNEL POWER MOSFET 500V, N-CHANNEL POWER MOSFET 500V, N-CHANNEL POWER MOSFET 500V, N-CHANNEL SURFACE MOUNT (SMD-1) RAD Hard HEXFET TECHNOLOGY SURFACE MOUNT (SMD-1) RAD

 9.1. Size:277K  international rectifier
irhn7250.pdf pdf_icon

IRHN7450

PD - 90679F IRHN7250 JANSR2N7269U RADIATION HARDENED 200V, N-CHANNEL POWER MOSFET REF MIL-PRF-19500/603 SURFACE MOUNT(SMD-1) RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHN7250 100K Rads (Si) 0.1 26A JANSR2N7269U IRHN3250 300K Rads (Si) 0.1 26A JANSF2N7269U IRHN4250 600K Rads (Si) 0.1 26A JANSG2N7269U IRHN8250

Otros transistores... IRHYS67234CM, IRHN57250SE, IRHN7054, IRHN7130, IRHN7150, IRHN7230, IRHN7250, IRHN7250SE, 2N7002, IRHN7450SE, IRHN7C50SE, IRHN9130, IRHN9150, IRHN9230, IRHN9250, IRHM57064, IRHM57160