IRHN7450 - описание и поиск аналогов

 ..1. Size:1035K  international rectifier
 irhm7054 irhm7150 irhm7250 irhm7450 irhn7054 irhn7150 irhn7250 irhn7450.pdf 

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/603J shall be completed by 20 June 2013. 6 May 2013 SUPERSEDING MIL-PRF-19500/603H 1 July 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7268, 2N7269,

 ..2. Size:310K  international rectifier
 irhn7450.pdf 

PD - 90819A IRHN7450 IRHN8450 REPETITIVE AVALANCHE AND dv/dt RATED JANSR2N7270U HEXFET TRANSISTOR JANSH2N7270U N CHANNEL MEGA RAD HARD 500Volt, 0.45 , MEGA RAD HARD HEXFET Product Summary International Rectifier s RAD HARD technology Part Number BVDSS RDS(on) ID HEXFETs demonstrate excellent threshold voltage IRHN7450 500V 0.45 11A stability and breakdown

 0.1. Size:246K  international rectifier
 irhn7450se.pdf 

PD - 91313C RADIATION HARDENED IRHN7450SE RADIATION HARDENED IRHN7450SE RADIATION HARDENED IRHN7450SE RADIATION HARDENED IRHN7450SE RADIATION HARDENED IRHN7450SE POWER MOSFET 500V, N-CHANNEL POWER MOSFET 500V, N-CHANNEL POWER MOSFET 500V, N-CHANNEL POWER MOSFET 500V, N-CHANNEL POWER MOSFET 500V, N-CHANNEL SURFACE MOUNT (SMD-1) RAD Hard HEXFET TECHNOLOGY SURFACE MOUNT (SMD-1) RAD

 9.1. Size:277K  international rectifier
 irhn7250.pdf 

PD - 90679F IRHN7250 JANSR2N7269U RADIATION HARDENED 200V, N-CHANNEL POWER MOSFET REF MIL-PRF-19500/603 SURFACE MOUNT(SMD-1) RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHN7250 100K Rads (Si) 0.1 26A JANSR2N7269U IRHN3250 300K Rads (Si) 0.1 26A JANSF2N7269U IRHN4250 600K Rads (Si) 0.1 26A JANSG2N7269U IRHN8250

 9.2. Size:284K  international rectifier
 irhn7150.pdf 

PD - 90720C IRHN7150 RADIATION HARDENED JANSR2N7268U POWER MOSFET 100V, N-CHANNEL REF MIL-PRF-19500/603 SURFACE MOUNT (SMD-1) RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHN7150 100K Rads (Si) 0.065 34A JANSR2N7268U IRHN3150 300K Rads (Si) 0.065 34A JANSF2N7268U IRHN4150 600K Rads (Si) 0.065 34A JANSG2N7268U

 9.3. Size:29K  international rectifier
 irhn7c50se.pdf 

Provisional Data Sheet No. PD-9.1476A REPETITIVE AVALANCHE AND dv/dt RATED IRHN2C50SE HEXFET TRANSISTOR IRHN7C50SE N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD Product Summary 600 Volt, 0.60 , (SEE) RAD HARD HEXFET Part Number BVDSS RDS(on) ID International Rectifier s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE fail- IRHN2C50SE 60

 9.4. Size:457K  international rectifier
 irhn7130.pdf 

PD - 90821C IRHN7130 IRHN7130 IRHN7130 RADIATION HARDENED IRHN7130 RADIATION HARDENED IRHN7130 RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET RAD Hard HEXFET TECHNOLOGY RAD Hard HEXFET TECHNOLOGY RAD Hard HEXFET TE

 9.5. Size:247K  international rectifier
 irhn7054.pdf 

PD - 90884B IRHN7054 IRHN7054 IRHN7054 IRHN7054 IRHN7054 JANSR2N7394U JANSR2N7394U JANSR2N7394U JANSR2N7394U JANSR2N7394U RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED 60V, N-CHANNEL 60V, N-CHANNEL 60V, N-CHANNEL 60V, N-CHANNEL 60V, N-CHANNEL POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET REF MIL-PRF-1

 9.6. Size:440K  international rectifier
 irhn7230.pdf 

PD - 90822C IRHN7230 IRHN7230 IRHN7230 RADIATION HARDENED IRHN7230 RADIATION HARDENED IRHN7230 RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED 200V, N-CHANNEL 200V, N-CHANNEL 200V, N-CHANNEL 200V, N-CHANNEL 200V, N-CHANNEL POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET RAD Hard HEXFET TECHNOLOGY RAD Hard HEXFET TECHNOLOGY RAD Hard HEXFET TE

 9.7. Size:124K  international rectifier
 irhn7250se.pdf 

PD - 91780B RADIATION HARDENED IRHN7250SE POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT (SMD-1) RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHN7250SE 100K Rads (Si) 0.10 26A SMD-1 International Rectifier s RADHardTM HEXFET MOSFET technology provides high performance power MOSFETs Features for space applications. This technology ha