IRHN7450SE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRHN7450SE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 151 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 540 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.51 Ohm
   Paquete / Cubierta: TO276AB

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IRHN7450SE Datasheet (PDF)

..1. Size:246K international rectifier
irhn7450se.pdf

PD - 91313CRADIATION HARDENED IRHN7450SERADIATION HARDENED IRHN7450SERADIATION HARDENED IRHN7450SERADIATION HARDENED IRHN7450SERADIATION HARDENED IRHN7450SEPOWER MOSFET 500V, N-CHANNELPOWER MOSFET 500V, N-CHANNELPOWER MOSFET 500V, N-CHANNELPOWER MOSFET 500V, N-CHANNELPOWER MOSFET 500V, N-CHANNELSURFACE MOUNT (SMD-1) RAD Hard HEXFET TECHNOLOGYSURFACE MOUNT (SMD-1) RAD

6.1. Size:1035K international rectifier
irhm7054 irhm7150 irhm7250 irhm7450 irhn7054 irhn7150 irhn7250 irhn7450.pdf

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/603J shall be completed by 20 June 2013. 6 May 2013 SUPERSEDING MIL-PRF-19500/603H 1 July 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7268, 2N7269,

6.2. Size:310K international rectifier
irhn7450.pdf

PD - 90819AIRHN7450IRHN8450REPETITIVE AVALANCHE AND dv/dt RATED JANSR2N7270UHEXFET TRANSISTOR JANSH2N7270UN CHANNELMEGA RAD HARD500Volt, 0.45, MEGA RAD HARD HEXFET Product SummaryInternational Rectifiers RAD HARD technology Part Number BVDSS RDS(on) IDHEXFETs demonstrate excellent threshold voltageIRHN7450 500V 0.45 11Astability and breakdown

9.1. Size:277K international rectifier
irhn7250.pdf

PD - 90679FIRHN7250JANSR2N7269URADIATION HARDENED200V, N-CHANNELPOWER MOSFET REF:MIL-PRF-19500/603SURFACE MOUNT(SMD-1) RAD-Hard HEXFET TECHNOLOGYProduct SummaryPart Number Radiation Level RDS(on) ID QPL Part NumberIRHN7250 100K Rads (Si) 0.1 26A JANSR2N7269UIRHN3250 300K Rads (Si) 0.1 26A JANSF2N7269UIRHN4250 600K Rads (Si) 0.1 26A JANSG2N7269UIRHN8250

9.2. Size:284K international rectifier
irhn7150.pdf

PD - 90720CIRHN7150RADIATION HARDENED JANSR2N7268UPOWER MOSFET 100V, N-CHANNELREF: MIL-PRF-19500/603SURFACE MOUNT (SMD-1)RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHN7150 100K Rads (Si) 0.065 34A JANSR2N7268U IRHN3150 300K Rads (Si) 0.065 34A JANSF2N7268U IRHN4150 600K Rads (Si) 0.065 34A JANSG2N7268U

9.3. Size:29K international rectifier
irhn7c50se.pdf

Provisional Data Sheet No. PD-9.1476AREPETITIVE AVALANCHE AND dv/dt RATEDIRHN2C50SEHEXFET TRANSISTORIRHN7C50SEN-CHANNELSINGLE EVENT EFFECT (SEE) RAD HARDProduct Summary600 Volt, 0.60, (SEE) RAD HARD HEXFETPart Number BVDSS RDS(on) IDInternational Rectifiers (SEE) RAD HARD technologyHEXFETs demonstrate virtual immunity to SEE fail- IRHN2C50SE60

9.4. Size:457K international rectifier
irhn7130.pdf

PD - 90821CIRHN7130IRHN7130IRHN7130RADIATION HARDENED IRHN7130RADIATION HARDENED IRHN7130RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFET RAD Hard HEXFET TECHNOLOGYRAD Hard HEXFET TECHNOLOGYRAD Hard HEXFET TE

9.5. Size:247K international rectifier
irhn7054.pdf

PD - 90884BIRHN7054IRHN7054IRHN7054IRHN7054IRHN7054JANSR2N7394UJANSR2N7394UJANSR2N7394UJANSR2N7394UJANSR2N7394URADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED60V, N-CHANNEL60V, N-CHANNEL60V, N-CHANNEL60V, N-CHANNEL60V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETREF: MIL-PRF-1

9.6. Size:440K international rectifier
irhn7230.pdf

PD - 90822CIRHN7230IRHN7230IRHN7230RADIATION HARDENED IRHN7230RADIATION HARDENED IRHN7230RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFET RAD Hard HEXFET TECHNOLOGYRAD Hard HEXFET TECHNOLOGYRAD Hard HEXFET TE

9.7. Size:124K international rectifier
irhn7250se.pdf

PD - 91780BRADIATION HARDENED IRHN7250SEPOWER MOSFET 200V, N-CHANNELSURFACE MOUNT (SMD-1) RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) I D IRHN7250SE 100K Rads (Si) 0.10 26ASMD-1International Rectifiers RADHardTM HEXFET MOSFETtechnology provides high performance power MOSFETsFeatures:for space applications. This technology ha

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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