IRHN9250 Todos los transistores

 

IRHN9250 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRHN9250
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 45 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.315 Ohm
   Paquete / Cubierta: TO276AB

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IRHN9250 Datasheet (PDF)

 ..1. Size:126K  international rectifier
irhn9250.pdf

IRHN9250
IRHN9250

PD - 91300BIRHN9250RADIATION HARDENED JANSR2N7423UPOWER MOSFET 200V, P-CHANNELSURFACE MOUNT (SMD-1) REF: MIL-PRF-19500/662RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHN9250 100K Rads (Si) 0.315 -14A JANSR2N7423U IRHN93250 300K Rads (Si) 0.315 -14A JANSF2N7423USMD-1International Rectifiers RADHard HEXFET

 ..2. Size:272K  international rectifier
irhm9150 irhm9250 irhn9150 irhn9250.pdf

IRHN9250
IRHN9250

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/662F shall be completed by 9 August 2014. w/AMENDMENT 1 9 May 2014 SUPERSEDING MIL-PRF-19500/662F 10 December 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U

 8.1. Size:36K  international rectifier
irhn9230.pdf

IRHN9250
IRHN9250

Provisional Data Sheet No. PD-9.1445REPETITIVE AVALANCHE AND dv/dt RATEDIRHN9230HEXFET TRANSISTORP-CHANNELRAD HARD-200 Volt, 0.8 RAD HARD HEXFET Product Summary, International Rectifiers P-Channel RAD HARD technologyPart Number BVDSS RDS(on) IDHEXFETs demonstrate excellent threshold voltage stabilityand breakdown voltage stability at total radiati

 9.1. Size:128K  international rectifier
irhn9150.pdf

IRHN9250
IRHN9250

PD - 90885DIRHN9150RADIATION HARDENED JANSR2N7422UPOWER MOSFET 100V, P-CHANNELSURFACE MOUNT (SMD-1) REF: MIL-PRF-19500/662RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHN9150 100K Rads (Si) 0.080 -22A JANSR2N7422U IRHN93150 300K Rads (Si) 0.080 -22A JANSF2N7422USMD-1International Rectifiers RADHard HEXFET

 9.2. Size:127K  international rectifier
irhn9130.pdf

IRHN9250
IRHN9250

PD - 90886CRADIATION HARDENED IRHN9130POWER MOSFET 100V, P-CHANNELSURFACE MOUNT (SMD-1) RAD-Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHN9130 100K Rads (Si) 0.3 -11A IRHN93130 300K Rads (Si) 0.3 -11AInternational Rectifiers RAD-Hard HEXFETTM technol- SMD-1ogy provides high performance power MOSFETs forspace applications. Th

 9.3. Size:117K  international rectifier
irhn93150.pdf

IRHN9250
IRHN9250

Provisional Data Sheet No. PD - 9.885BREPETITIVE AVALANCHE AND dv/dt RATED IRHN9150IRHN93150HEXFET TRANSISTORP-CHANNEL RAD HARD -100Volt, 0.075, RAD HARD HEXFETProduct SummaryInternational Rectifiers P-Channel RAD HARD tech-Part Number BVDSS RDS(on) IDnology HEXFETs demonstrate excellent thresholdIRHN9150 -100V 0.075 -22Avoltage stability a

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