IRHN9250 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRHN9250
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 150 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 14 A
Tjⓘ - Максимальная температура канала: 150 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.315 Ohm
Тип корпуса: TO276AB
IRHN9250 Datasheet (PDF)
irhn9250.pdf
PD - 91300BIRHN9250RADIATION HARDENED JANSR2N7423UPOWER MOSFET 200V, P-CHANNELSURFACE MOUNT (SMD-1) REF: MIL-PRF-19500/662RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHN9250 100K Rads (Si) 0.315 -14A JANSR2N7423U IRHN93250 300K Rads (Si) 0.315 -14A JANSF2N7423USMD-1International Rectifiers RADHard HEXFET
irhm9150 irhm9250 irhn9150 irhn9250.pdf
The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/662F shall be completed by 9 August 2014. w/AMENDMENT 1 9 May 2014 SUPERSEDING MIL-PRF-19500/662F 10 December 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U
irhn9230.pdf
Provisional Data Sheet No. PD-9.1445REPETITIVE AVALANCHE AND dv/dt RATEDIRHN9230HEXFET TRANSISTORP-CHANNELRAD HARD-200 Volt, 0.8 RAD HARD HEXFET Product Summary, International Rectifiers P-Channel RAD HARD technologyPart Number BVDSS RDS(on) IDHEXFETs demonstrate excellent threshold voltage stabilityand breakdown voltage stability at total radiati
irhn9150.pdf
PD - 90885DIRHN9150RADIATION HARDENED JANSR2N7422UPOWER MOSFET 100V, P-CHANNELSURFACE MOUNT (SMD-1) REF: MIL-PRF-19500/662RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHN9150 100K Rads (Si) 0.080 -22A JANSR2N7422U IRHN93150 300K Rads (Si) 0.080 -22A JANSF2N7422USMD-1International Rectifiers RADHard HEXFET
irhn9130.pdf
PD - 90886CRADIATION HARDENED IRHN9130POWER MOSFET 100V, P-CHANNELSURFACE MOUNT (SMD-1) RAD-Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHN9130 100K Rads (Si) 0.3 -11A IRHN93130 300K Rads (Si) 0.3 -11AInternational Rectifiers RAD-Hard HEXFETTM technol- SMD-1ogy provides high performance power MOSFETs forspace applications. Th
irhn93150.pdf
Provisional Data Sheet No. PD - 9.885BREPETITIVE AVALANCHE AND dv/dt RATED IRHN9150IRHN93150HEXFET TRANSISTORP-CHANNEL RAD HARD -100Volt, 0.075, RAD HARD HEXFETProduct SummaryInternational Rectifiers P-Channel RAD HARD tech-Part Number BVDSS RDS(on) IDnology HEXFETs demonstrate excellent thresholdIRHN9150 -100V 0.075 -22Avoltage stability a
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918